Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

Physica Status Solidi - Rapid Research Letters

Volumn 9, Issue 7, 2015, Pages 393-396

  Macco, B ^a   Vos, M F J ^a   Thissen, N F W ^a   Bol, A A ^a   Kessels, W M M ^a,b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Solliance Solar Research   (Netherlands)

Author keywords

Atomic layer deposition; Molybdenum oxide; Passivating contacts; Silicon heterojunction solar cells

Indexed keywords

ATOMS; HETEROJUNCTIONS; MOLYBDENUM OXIDE; PASSIVATION; PROCESSING; SILICON; SILICON SOLAR CELLS; TEMPERATURE;

FUTURE APPLICATIONS; HIGH TRANSPARENCY; LOW PROCESSING TEMPERATURE; LOW TEMPERATURES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SELECTIVE CONTACTS; SILICON HETEROJUNCTIONS; SUBSTRATE TEMPERATURE;

ATOMIC LAYER DEPOSITION;

EID: 84937643011     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201510117     Document Type: Article

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