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Volumn 116, Issue 25, 2012, Pages 13480-13487

Effects of oxidation state and crystallinity of tungsten oxide interlayer on photovoltaic property in bulk hetero-junction solar cell

Author keywords

[No Author keywords available]

Indexed keywords

AIR-ANNEALING; AMORPHOUS PHASE; ANNEALING CONDITION; ANNEALING IN VACUUM; ANNEALING TEMPERATURES; BULK HETEROJUNCTION SOLAR CELLS; CONDUCTION-BAND MINIMUM; CRYSTALLINE PHASE; CRYSTALLINITIES; HALL MEASUREMENTS; HIGHER EFFICIENCY; HOLE INJECTION; HOLE TRANSPORTS; METHYL ESTERS; N-TYPE SEMICONDUCTORS; OXIDATION STATE; PHOTOVOLTAIC PERFORMANCE; PHOTOVOLTAIC PROPERTY; POLY (3-HEXYLTHIOPHENE); SERIES RESISTANCES; SHUNT RESISTANCES; TEMPERATURE CHANGES; TUNGSTATE SOLUTIONS; TUNGSTEN OXIDE; TUNGSTEN OXIDE FILMS; TUNGSTEN OXIDE THIN FILMS; TUNGSTEN TRIOXIDE; VACUUM-ANNEALING; X-RAY PHOTOELECTRONS;

EID: 84863112050     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2122505     Document Type: Article
Times cited : (42)

References (53)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.