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Development of through silicon via (TSV) interposer technology for large die (21 3 21 mm) fine-pitch Cu/low-k FCBGA package
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X. Zhang, T. Chai, J.H. Lau, C. Selvanayagam, K. Biswas, S. Liu, D. Pinjala, G. Tang, Y. Ong, S. Vempati, E. Wai, H. Li, B. Liao, N. Ranganathan, V. Kripesh, J. Sun, J. Doricko, and C. Vath, "Development of through silicon via (TSV) interposer technology for large die (21 3 21 mm) fine-pitch Cu/low-k FCBGA package," Proceedings of IEEE/ECTC, pp. 305-312, May 2009.
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B. Banijamali, S. Ramalingam, K. Nagarajan, and R. Chaware, "Advanced reliability study of TSV interposers and interconnects for the 28 nm technology FPGA," Proceedings of IEEE/ECTC, pp. 285-290, June 2011.
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J. Xie, H. Shi, Y. Li, Z. Li, A. Rahman, K. Chandrasekar, D. Ratakonda, M. Deo, K. Chanda, V. Hool, M. Lee, N. Vodrahalli, D. Ibbotson, and T. Verma, "Enabling the 2.5D integration," Proceedings of IMAPS International Symposium on Microelectronics, pp. 254-267, September 2012.
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Y.C. Hsin, C. Chen, J.H. Lau, P. Tzeng, S. Shen, Y. Hsu, S. Chen, C. Wn, J. Chen, T. Ku, and M. Kao, "Effects of etch rate on scallop of throughsilicon vias (TSVs) in 200 mm and 300 mm wafers," Proceedings of IEEE/ECTC, pp. 1130-1135, May 2011.
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K. Zoschke, J. Wolf, C. Lopper, I. Kuna, N. Jürgensen, V. Glaw, K. Samulewicz, J. Röder, M. Wilke, O. Wünsch, M. Klein, M. Suchodoletz, H. Oppermann, T. Braun, R. Wieland, and O. Ehrmann, "TSV based silicon interposer technology for wafer level fabrication of 3D SiP modules," Proceedings of IEEE/ECTC, pp. 836-842, May 2011.
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