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Volumn , Issue , 2011, Pages 1130-1135

Effects of etch rate on scallop of through-silicon vias (TSVs) in 200mm and 300mm wafers

Author keywords

[No Author keywords available]

Indexed keywords

300MM WAFER; CROSS SECTION; ETCH RATES; PROCESS GUIDELINES; THROUGH SILICON VIAS;

EID: 79960402544     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898652     Document Type: Conference Paper
Times cited : (52)

References (8)
  • 2
    • 2342464265 scopus 로고    scopus 로고
    • Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system
    • C. K. Chung, "Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system", JOURNAL OF MICROMECHANICS AND MICROENGINEERING, Vol. 14, 2004, pp. 656-662.
    • (2004) JOURNAL OF MICROMECHANICS AND MICROENGINEERING , vol.14 , pp. 656-662
    • Chung, C.K.1
  • 3
    • 0742286282 scopus 로고    scopus 로고
    • Sidewall roughness control in advanced silicon etch process
    • H.-C. Liu, Y.-H. Lin, W. Hsu, "Sidewall roughness control in advanced silicon etch process", Journal of Microsystem Technologies, Vol. 10, 2003, pp. 29-34.
    • (2003) Journal of Microsystem Technologies , vol.10 , pp. 29-34
    • Liu, H.-C.1    Lin, Y.-H.2    Hsu, W.3
  • 5
    • 0036601273 scopus 로고    scopus 로고
    • Effect of process parameters on the surface morphology and mechanical performance of silicon surfaces after deep reactive ion etching (DRIE)
    • K. Chen, Ayon, A. A., Zhang, X., and Spearing, S. M. "Effect of process parameters on the surface morphology and mechanical performance of silicon surfaces after deep reactive ion etching (DRIE)." J. Microelectromech. Syst. 11:264-275, 2002.
    • (2002) J. Microelectromech. Syst. , vol.11 , pp. 264-275
    • Chen, K.1    Ayon, A.A.2    Zhang, X.3    Spearing, S.M.4
  • 6
    • 51349150845 scopus 로고    scopus 로고
    • Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer
    • Lake Buena Vista, FL, May 27-30
    • J. Tian and Bartek, M. "Simultaneous Through-Silicon Via and Large Cavity Formation Using Deep Reactive Ion Etching and Aluminum Etch-Stop Layer." In IEEE Proceedings of Electronic Components & Technology Conference, Lake Buena Vista, FL, May 27-30, 2008, pp. 1787-1792.
    • (2008) IEEE Proceedings of Electronic Components & Technology Conference , pp. 1787-1792
    • Tian, J.1    Bartek, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.