Effects of slurry in Cu chemical mechanical polishing (CMP) of TSVs for 3-D IC integration

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 2, Issue 6, 2012, Pages 956-963

  Chen, Jui Chin ^a   Lau, John H ^a   Tzeng, Pei Jer ^a   Chen, Shang Chun ^a   Wu, Chien Ying ^a   Chen, Chien Chou ^a   Hsin, Yu Chen ^a   Hsu, Yi Feng ^a   Shen, Shang Hung ^a   Liao, Sue Chen ^a   Ho, Chi Hon ^a   Lin, Cha Hsin ^a   Ku, Tzu Kun ^a   Kao, Ming Jer ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Chemical mechanical polishing; Cu slurry; polishing; through silicon via

Indexed keywords

CRITICAL THICKNESS; CU SURFACES; ISOLATION OXIDES; METAL DISHING; REDISTRIBUTION LAYERS; REMOVAL RATE; THROUGH-SILICON-VIA;

OPTIMIZATION; POLISHING; SLURRIES;

CHEMICAL MECHANICAL POLISHING;

EID: 84861922835     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2011.2177663     Document Type: Article

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