High mobility multibit nonvolatile memory elements based organic field effect transistors with large hysteresis

Organic Electronics

Volumn 35, Issue , 2016, Pages 53-58

  Zhang, Yong ^a   Lang, Caili ^a   Fan, Jingze ^a   Shi, Lei ^b   Yi, Yuanping ^c   Yu, Qingjiang ^a   Guo, Fengyun ^a   Wang, Jinzhong ^a   Zhao, Liancheng ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

Multibit nonvolatile memory; Organic field effect transistor; Polyquinoline

Indexed keywords

NONVOLATILE STORAGE; THRESHOLD VOLTAGE; TRANSISTORS;

CONTINUOUS OPERATION; LARGE HYSTERESIS; MEMORY PROPERTIES; NON-VOLATILE MEMORY; POLYQUINOLINES; POSITIVE VOLTAGE; RETENTION TIME; SATURATION REGION;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84966713000     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2016.05.008     Document Type: Article

References (51)

1. G. Velu, C. Legrand, O. Tharaud, A. Chapoton, D. Remiens, and G. Horowitz Appl. Phys. Lett. 79 2001 659
2. J.-C. Chen, C.-L. Liu, Y.-S. Sun, S.-H. Tung, and W.-C. Chen Soft Matter 8 2012 526
3. P. Heremans, G.H. Gelinck, R. Müller, K.-J. Baeg, D.-Y. Kim, and Y.-Y. Noh Chem. Mater. 23 2011 341
4. Y. Guo, G. Yu, and Y. Liu Adv. Mater. 22 2010 4427
5. R.C.G. Naber, K. Asadi, P.W.M. Blom, D.M. de Leeuw, and B. de Boer Adv. Mater. 22 2010 933
6. Y.-H. Chou, H.-C. Chang, C.-L. Liu, and W.-C. Chen Polym. Chem. 6 2015 341
7. H.-Y. Chi, H.-W. Hsu, S.-H. Tung, and C.-L. Liu ACS Appl. Mater. Interfaces 7 2015 5663
8. C.-L. Liu, and W.-C. Chen Polym. Chem. 2 2011 2169
9. J.F. Martínez Hardigree, and H.E. Katz Acc. Chem. Res. 47 2014 1369
10. S.K. Hwang, T.J. Park, K.L. Kim, S.M. Cho, B.J. Jeong, and C. Park ACS Appl. Mater. Interfaces 6 2014 20179
11. X. Cai, C.P. Gerlach, and C.D. Frisbie J. Phys. Chem. C 111 2007 452
12. R.C.G. Naber, C. Tanase, P.W.M. Blom, G.H. Gelinck, A.W. Marsman, F.J. Touwslager, S. Setayesh, and D.M. de Leeuw Nat. Mater. 4 2005 243
13. M. Mushrush, A. Facchetti, M. Lefenfeld, H.E. Katz, T.J. Marks, and J. Am Chem. Soc. 125 2003 9414
14. C.-A. Di, F. Zhang, and D. Zhu Adv. Mater. 25 2013 313
15. K.H. Lee, G. Lee, K. Lee, M.S. Oh, S. Im, and S.-M. Yoon Adv. Mater. 21 2009 4287
16. C. Novembre, D. Guérin, K. Lmimouni, C. Gamrat, and D. Vuillaume Appl. Phys. Lett. 92 2008 103314
17. R. Schroeder, L.A. Majewski, and M. Grell Adv. Mater. 16 2004 633
18. K.N. Narayanan Unni, R. de Bettignies, S. Dabos-Seignon, and J.-M. Nunzi Appl. Phys. Lett. 85 2004 1823
19. W. Wu, H. Zhang, Y. Wang, S. Ye, Y. Guo, C. Di, G. Yu, D. Zhu, and Y. Liu Adv. Funct. Mater. 18 2008 2593
20. W.L. Leong, P.S. Lee, S.G. Mhaisalkar, T.P. Chen, and A. Dodabalapur Appl. Phys. Lett. 90 2007 042906
21. S.K. Hwang, I. Bae, S.M. Cho, R.H. Kim, H.J. Jung, and C. Park Adv. Funct. Mater. 23 2013 5484
22. C.-C. Chen, M.-Y. Chiu, J.-T. Sheu, and K.-H. Wei Appl. Phys. Lett. 92 2008 143105
23. M.A. Khan, U.S. Bhansali, and H.N. Alshareef Adv. Mater. 24 2012 2165
24. S.-T. Han, Y. Zhou, P. Sonar, H. Wei, L. Zhou, Y. Yan, C.-S. Lee, and V.A.L. Roy ACS Appl. Mater. Interfaces 7 2015 1699
25. Y. Zhou, S.-T. Han, P. Sonar, and V.A.L. Roy Sci. Rep. 3 2013 2319
26. Y. Zhou, S.-T. Han, P. Sonar, X. Ma, J. Chen, Z. Zheng, and V.A.L. Roy Sci. Rep. 5 2015 9446
27. Q. Li, G. Mathur, S. Gowda, S. Surthi, Q. Zhao, L. Yu, J.S. Lindsey, D.F. Bocian, and V. Misra Adv. Mater. 16 2004 133
28. Y. Guo, C.-A. Di, S. Ye, X. Sun, J. Zheng, Y. Wen, W. Wu, G. Yu, and Y. Liu Adv. Mater. 21 2009 1954
29. M. Rinkiö, A. Johansson, G.S. Paraoanu, and P. Törmä Nano Lett. 9 2009 643
30. Y. Wang, Y.Q. Liu, Y.B. Song, S.H. Ye, W.P. Wu, Y.L. Guo, C.A. Di, Y.M. Sun, G. Yu, and W.P. Hu Adv. Mater. 20 2008 611
31. Y.M. Cai, and A.K.Y. Jen Appl. Phys. Lett. 67 1995 299
32. H.S. Nalwa, M. Suzuki, A. Takahashi, A. Kageyama, Y. Nomura, and Y. Honda Chem. Mater. 10 1998 2462
33. K. Kamijima, M. Kaji, S. Iioka, Y. Honda, V.J. Lee, and J. Photopolym Sci. Technol. 10 1997 79
34. H.L. Cheng, Y.S. Mai, W.Y. Chou, L.R. Chang, and X.W. Liang Adv. Funct. Mater. 17 2007 3639
35. H. Klauk Chem. Soc. Rev. 39 2010 2643
36. D.J. Gundlach, K.P. Pernstich, G. Wilckens, M. Grüter, S. Haas, and B. Batlogg J. Appl. Phys. 98 2005 064502
37. G. Gu, M.G. Kane, J.E. Doty, and A.H. Firester Appl. Phys. Lett. 87 2005 243512
38. T. Li, S.T. Hsu, B. Ulrich, H. Ying, L. Stecker, D. Evans, Y. Ono, J.-S. Maa, and J.J. Lee Appl. Phys. Lett. 79 2001 1661
39. R. Schroeder, L.A. Majewski, M. Voigt, and M. Grell IEEE Electron Device Lett. 26 2005 69
40. C.A. Lee, D.-W. Park, K.-D. Jung, B.-J. Kim, Y.C. Kim, J.D. Lee, and B.-G. Park Appl. Phys. Lett. 89 2006 262120
41. M. Radosavljević, M. Freitag, K.V. Thadani, and A.T. Johnson Nano Lett. 2 2002 761
42. G. Gu, M.G. Kane, and S.-C. Mau J. Appl. Phys. 101 2007 014504
43. T. Jung, A. Dodabalapur, R. Wenz, and S. Mohapatra Appl. Phys. Lett. 87 2005 182109
44. I.D. Parker, Q. Pei, and M. Marrocco Appl. Phys. Lett. 65 1994 1272
45. S. Arulmozhiraja, and T. Ohno J. Phys. Chem. C 112 2008 16561
46. J. Zhuang, W.-S. Lo, L. Zhou, Q.-J. Sun, C.-F. Chan, Y. Zhou, S.-T. Han, Y. Yan, W.-T. Wong, K.-L. Wong, and V.A.L. Roy Sci. Rep. 5 2015 14998
47. C.-W. Tseng, D.-C. Huang, and Y.-T. Tao ACS Appl. Mater. Interfaces 7 2015 9767
48. K.J. Baeg, Y.Y. Noh, J. Ghim, S.J. Kang, H. Lee, and D.Y. Kim Adv. Mater. 18 2006 3179
49. T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, and T. Someya Science 326 2009 1516
50. B. Cho, T.-W. Kim, S. Song, Y. Ji, M. Jo, H. Hwang, G.-Y. Jung, and T. Lee Adv. Mater. 22 2010 1228
51. C. Goldmann, C. Krellner, K.P. Pernstich, S. Haas, D.J. Gundlach, and B. Batlogg J. Appl. Phys. 99 2006 034507