Performance enhancement of black phosphorus field-effect transistors by chemical doping

IEEE Electron Device Letters

Volumn 37, Issue 4, 2016, Pages 429-432

  Du, Yuchen ^a   Yang, Lingming ^a   Zhou, Hong ^a   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Black phosphorus; Contact resistance; MOSFET; Phosphorene; Semiconductor device doping

Indexed keywords

CONTACT RESISTANCE; DRAIN CURRENT; MOSFET DEVICES; PHOSPHORUS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; TRANSISTORS;

CHEMICAL DOPING; DEVICE PERFORMANCE; HIGH FIELD EFFECT MOBILITY; MOS-FET; ON-STATE RESISTANCE; PERFORMANCE ENHANCEMENTS; PHOSPHORENE; SEMICONDUCTOR DEVICE DOPING;

FIELD EFFECT TRANSISTORS;

EID: 84963878428     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2016.2535905     Document Type: Article

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