Performance limits projection of black phosphorous field-effect transistors

IEEE Electron Device Letters

Volumn 35, Issue 9, 2014, Pages 963-965

  Lam, Kai Tak ^a   Dong, Zhipeng ^a   Guo, Jing ^a  

^a University of Florida   (United States)

Author keywords

MOS devices; semiconductor device modeling; thin film transistors

Indexed keywords

ANISOTROPY; BALLISTICS; FIELD EFFECT TRANSISTORS; MONOLAYERS; MOS DEVICES; SEMICONDUCTOR DEVICE MODELS; THIN FILM TRANSISTORS;

ANISOTROPIC BAND STRUCTURE; ANISOTROPIC EFFECTS; BALLISTIC DEVICES; BALLISTIC PERFORMANCE; DEGREE OF ANISOTROPY; FIELD EFFECT TRANSISTOR (FETS); PERFORMANCE LIMITS; TRANSPORT DIRECTION;

PHOSPHORUS;

EID: 84906835113     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2333368     Document Type: Article

References (17)

1. K. Takei et al., "Quantum confinement effects in nanoscale-thickness InAs membranes," Nano Lett., vol. 11, no. 11, pp. 5008-5012, Oct. 2011.
2. M. C. Lemme et al., "Mobility in graphene double gate field effect transistors," Solid-State Electron., vol. 52, no. 4, pp. 514-518, Apr. 2008.
3. Q. H. Wang et al., "Electronics and optoelectronics of two-dimensional transition metal dichalcogenides," Nature Nanotechnol., vol. 7, no. 11, pp. 699-712, Nov. 2012.
4. Z. Liu et al., "In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes," Nature Nanotechnol., vol. 8, no. 2, pp. 119-124, Jan. 2013.
5. B. Radisavljevic et al., "Single-layer MoS2 transistors," Nature Nanotechnol., vol. 6, no. 2, pp. 147-150, Feb. 2011.
6. L. Li et al., "Black phosphorus field-effect transistors," Nature Nanotechnol., vol. 9, pp. 372-377, Mar. 2014.
7. H. Liu et al., "Phosphorene: An unexplored 2D semiconductor with a high hole mobility," ACS Nano, vol. 8, no. 4, pp. 4033-4041, 2014.
8. F. Xia, H. Wang, and Y. Jia, "Rediscovering black phosphorus: A unique anisotropic 2D material for optoelectronics and electronics," arXiv:1402,0270, 2014.
9. A. Rahman et al., "Theory of ballistic nanotransistors," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1853-1864, Sep. 2003.
10. G. Kresse and J. Furthmüller, "Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set," Phys. Rev. B, vol. 54, no. 16, pp. 11169-11186, Oct. 1996.
11. J. Klimeš, D. R. Bowler, and A. Michaelides, "Van der Waals density functionals applied to solids," Phys. Rev. B, vol. 83, no. 19, p. 195131, May 2011.
12. J. Heyd, G. E. Scuseria, and M. Ernzerhof, "Hybrid functionals based on a screened Coulomb potential," J. Chem. Phys., vol. 118, no. 18, pp. 8207-8215, 2003.
13. R. Keyes, "The electrical properties of black phosphorus," Phys. Rev., vol. 92, no. 3, pp. 580-584, Nov. 1953.
14. A. A. Mostofi et al., "Wannier90: A tool for obtaining maximallylocalised Wannier functions," Comput. Phys. Commun., vol. 178, no. 9, pp. 685-699, May 2008.
15. L. Liu et al., "Performance limits of monolayer transition metal dichalcogenide transistors," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3042-3047, Sep. 2011.
16. J. Wang and M. Lundstrom, "Channel material optimization for the ultimate planar and nanowire MOSFETs: A theoretical exploration," in 63rd Device Res. Conf. Dig., Jun. 2005, pp. 241-242.
17. J. Qiao et al., "High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus," arXiv:1401.5045v3.