Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

ACS Applied Materials and Interfaces

Volumn 8, Issue 7, 2016, Pages 4894-4902

  Mottram, Alexander D ^a   Lin, Yen Hung ^a   Pattanasattayavong, Pichaya ^a,b   Zhao, Kui ^c   Amassian, Aram ^c   Anthopoulos, Thomas D ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b VIDYASIRIMEDHI INSTITUTE OF SCIENCE AND TECHNOLOGY   (Thailand)

^c KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

indium oxide; metal oxide transistor; photodetector; photosensitivity; phototransistor; responsivity

Indexed keywords

DYE-SENSITIZED SOLAR CELLS; INDIUM; LIGHT SENSITIVE MATERIALS; LIGHT TRANSMISSION; METALS; PHOTODETECTORS; PHOTONS; PHOTOSENSITIVITY; SELF ASSEMBLED MONOLAYERS;

FLEXIBLE SUBSTRATE; INDIUM OXIDE; METAL OXIDES; RESPONSIVITY; SEMICONDUCTING LAYER; TEMPERATURE SENSITIVE; WAVELENGTH RANGES; WAVELENGTH REGIONS;

PHOTOTRANSISTORS;

EID: 84962599598     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b11210     Document Type: Article

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