Photoinduced electron transfer in dye-sensitized SnO2 nanowire field-effect transistors

Advanced Functional Materials

Volumn 21, Issue 3, 2011, Pages 474-479

  Wu, Hsing Chen ^a   Huang, Yuan Chang ^a   Ding, I Kang ^c   Chen, Chun Cing ^c   Yang, Yi Han ^a   Tsai, Chia Chang ^c   Chen, Chii Dong ^b,d   Chen, Yit Tsong ^a,c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^d NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

electron transfer; field effect transistors; nanowires; solar cells

Indexed keywords

DYE MOLECULE; DYE SENSITIZED; DYE-SENSITIZED SOLAR CELL; ELECTRON TRANSFER; ELECTRON-HOLE RECOMBINATION; FALLING EDGE; FIELD EFFECTS; FUNCTIONALIZED; OPTICAL ABSORPTION SPECTRUM; PERFORMANCE OPTIMIZATIONS; PHOTO-INDUCED ELECTRON TRANSFER; PHOTOACTION SPECTRA; PHOTOLUMINESCENCE SPECTRUM; VOLTAGE DEPENDENCE;

CHLOROPHYLL; DYES; ELECTRON INJECTION; ELECTRON TRANSITIONS; LIGHT ABSORPTION; MESFET DEVICES; NANOWIRES; OPTIMIZATION; PHOTOELECTROCHEMICAL CELLS; PHOTOLUMINESCENCE; SOLAR CELLS;

FIELD EFFECT TRANSISTORS;

EID: 79551654544     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201001521     Document Type: Article

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