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Journal of Materials Chemistry C

Volumn 2, Issue 9, 2014, Pages 1592-1596

Novel graphene-oxide-semiconductor nanowire phototransistors

(8) Jin, Weifeng a,b Gao, Zhiwei a Zhou, Yu c Yu, Bin a Zhang, Hui a Peng, Hailin c Liu, Zhongfan c Dai, Lun a,b

a PEKING UNIVERSITY (China)

b Collaborative Innovation Center of Quantum Matter ^* (China)

c PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CDSE NANOWIRES; CONDUCTIVE CHANNELS; INTEGRATED OPTICAL CIRCUIT; LIGHT ILLUMINATION; MODULATION EFFECTS; PEAK TRANSCONDUCTANCE; SPECIFIC DETECTIVITY; SUBTHRESHOLD SWING;

ELECTRIC FIELD EFFECTS; GATE DIELECTRICS; GRAPHENE; HAFNIUM OXIDES; NANOWIRES; OPTICAL COMMUNICATION; THRESHOLD VOLTAGE;

PHOTOTRANSISTORS;

EID: 84893872346 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc32123a Document Type: Article

Times cited : (19)

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