High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

Nanotechnology

Volumn 25, Issue 36, 2014, Pages

  Abderrahmane, A ^a   Ko, P J ^a   Thu, T V ^a   Ishizawa, S ^a   Takamura, T ^a   Sandhu, A ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

2D materials; molybdenum diselenide; optoelectronic; photodetector; phototransistor

Indexed keywords

FIELD EFFECT TRANSISTORS; PHOTODETECTORS; QUANTUM EFFICIENCY; SELENIUM COMPOUNDS; THRESHOLD LOGIC;

EXTERNAL QUANTUM EFFICIENCY; MOLYBDENUM DISELENIDE; OPTOELECTRONIC; OPTOELECTRONIC PROPERTIES; PHOTOELECTRONIC; PHOTORESPONSIVITY; ROOM TEMPERATURE; THRESHOLD GATE VOLTAGE;

PHOTOTRANSISTORS;

EID: 84906351123     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/36/365202     Document Type: Article

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