Basic study on conductive characteristics of SiC power device for its application to AC/DC converter

IEEE Transactions on Applied Superconductivity

Volumn 14, Issue 2, 2004, Pages 690-692

  Matsukawa, Tatsuya ^a   Chikaraishi, Hirotaka ^b   Sato, Yoshihisa ^c   Shimada, Ryuichi ^d  

^a NAGOYA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR FUSION SCIENCE   (Japan)

^c DAIDO UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AC DC converter; On state resistance; Schottky Barrier Diode; SiC based power device

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC CONDUCTANCE; ELECTRIC EQUIPMENT PROTECTION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

AC/DC CONVERTERS; ON-STATE RESISTANCES; SIC-BASED POWER DEVICES; SWITCHING FREQUENCY;

POWER CONVERTERS;

EID: 4344706640     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2004.830031     Document Type: Conference Paper

References (6)

1. T. P. Chow, "Progress in SiC high-voltage power switching devices," presented at the 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), Nara, Japan, May 31-June 2 2000.
2. H. Ohashi, "Power devices: present status and future possibility," presented at the 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), Nara, Japan, May 31-June 2 2000.
3. T. Matsukawa, M. Shioyama, K. Shimada, T. Takaku, C. Neumeyer, S. Tsuji-Iio, and R. Shimada, "Application of parallel connected power-MOSFET elements to high current DC power supply," Fusion Engineering and Design, vol. 58-59, pp. 63-67, 2001.
4. T. Matsukawa, K. Shimada, M. Shioyama, J. Nomura, T. Takaku, S. Tsuji-Iio, and R. Shimada, "Advanced application of power-MOSFET to large capacity converter," in Proceedings of the Power Conversion Conference-Osaka, Osaka, Japan, April 2-5, 2002, pp. 1170-1175.
5. T. Matsukawa, M. Shioyama, J. Nomura, C. Neumeyer, S. Tsuji-Iio, and R. Shimada, "Synchronous rectifier using power-MOSFET for high current AC/DC converter system," presented at the 19th IEEE/NPSS Symposium on Fusion Engineering, Atlantic City, NJ, USA, Jan. 2002.
6. T. Matsukawa, C. Neumeyer, T. Takaku, S. Tsuji-Iio, and R. Shimada, "Application of SiC-based power element to high current AC/DC converter system," Fusion Engineering and Design, vol. 66-68C, pp. 1155-1158, 2003.