Experimental and analytical performance evaluation of sic power devices in the matrix converter

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2584-2596

  Safari, Saeed ^a   Castellazzi, Alberto ^a   Wheeler, Patrick ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Matrix converter; normally off SiC JFET; power losses evaluation; SiC BJT; SiC MOSFET

Indexed keywords

MATRIX CONVERTER; POWER-LOSSES; SIC BJT; SIC JFET; SIC MOSFET;

ELECTRIC EQUIPMENT; MOSFET DEVICES; POWER CONVERTERS; SILICON; SWITCHING FREQUENCY;

SILICON CARBIDE;

EID: 84893089629     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2289746     Document Type: Article

References (27)

1. T. R. McNutt, A. R. Hefner, H. A. Mantooth, D. Berning, and R. Sei-Hyung, "Silicon carbide powerMOSFET model and parameter extraction sequence," IEEE Trans. Power Electron., vol. 22, no. 2, pp. 353-363, Mar. 2007. (Pubitemid 46523158)
2. T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, H. A. Mantooth, F. Barlow,T.Kimoto, andT.Hikihara, "Power conversion with SiC devices at extremely high ambient temperatures," IEEE Trans. Power Electron., vol. 22, no. 4, pp. 1321-1329, Jul. 2007. (Pubitemid 47098833)
3. R. A.Wood and T. E. Salem, "Evaluation of a 1200-V, 800-A All-SiC dual module," IEEE Trans. Power Electron., vol. 26, no. 9, pp. 2504-2511, Sep. 2011.
4. J. Biela, M. Schweizer, S. Waffler, and J. W. Kolar, "SiC versus Sievaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors," IEEE Trans. Ind. Electron., vol. 58, no. 7, pp. 2872-2882, Jul. 2011.
5. C. J. Cass, R. Burgos, F. Wang, and D. Boroyevich, "Improved charge controlwith adjustable input power factor and optimized switching pattern for a 150 kHz three-phase buck rectifier," in Proc. IEEE 23rd Annu. Appl. Power Electron. Conf. Expo., 2008, pp. 1200-1206.
6. L. Rixin, F. Wang, N. Puqi, Z. Di, J. Dong, R. Burgos, D. Boroyevich, K. J. Karimi, and V. D. Immanuel, "Development of a 10 kW high power density three-phase ac-dc-ac converter using SiC devices," in Proc. 13th Eur. Conf. Power Electron. Appl., 2009, pp. 1-12.
7. T. Friedli, S. D. Round, and J. W. Kolar, "A 100 kHz SiC sparse matrix converter," in Proc. IEEE Power Electron. Spec. Conf., 2007, pp. 2148-2154.
8. S. Safari, A. Castellazzi, and P.Wheeler, "Evaluation of normally-off SiC JFET for a high power density matrix converter," in Proc. 15th Int. Power Electron. Motion Control Conf., 2012, pp. DS1a.9-1-DS1a.9-7.
9. S. Safari, A. Castellazzi, and P.Wheeler, "Evaluation of SiC power devices for a high power density matrix converter," in Proc. IEEE Energy Convers. Congr. Expo., 2012, pp. 3934-3941.
10. P. W. Wheeler, J. Rodriguez, J. C. Clare, L. Empringham, and A. Weinstein, "Matrix converters: A technology review," IEEE Trans. Ind. Electron., vol. 49, no. 2, pp. 276-288, Apr. 2002. (Pubitemid 34711830)
11. B. Wrzecionko, S. Kach, D. Bortis, J. Biela, and J. W. Kolar, "Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs," in Proc. IEEE 36th Annu. Conf. Ind. Electron. Soc., 2010, pp. 605-612.
12. X. Xu, A. Q. Huang, Y. Gao, A. Agarwal, S. Krishnaswami, S.-H. Ryu, and X. Huang, "Performance evaluation of SiC MOSFET/BJT/Schottky diode in A 1 MHz single phase PFC," in Proc. IEEE 22nd Annu. Appl. Power Electron. Conf., 2007, pp. 1268-1272.
13. Cree. CMF10120D-Silicon Carbide Power MOSFET Datasheet. (2013). [Online]. Available: http://www.cree.com/?/media/Files/Cree/Power/Data%20Sheets/ CMF10120D.pdf
14. B. Buono, R. Ghandi, M. Domeij, B. G. Malm, C. M. Zetterling, and M. Ostling, "Modeling and characterization of current gain versus temperature in 4 H-SiC power BJTs," IEEE Trans. Electron Devices, vol. 57, no. 3, pp. 704-711, Mar. 2010.
15. S. Waffler, S. D. Round, and J. W. Kolar, "High temperature (-200 ?C) isolated gate drive topologies for silicon carbide (SiC) JFET," in Proc. IEEE 34th Annu. Conf. Ind. Electron., 2008, pp. 2867-2872.
16. R. Burgos, C. Zheng, D. Boroyevich, and F.Wang, "Design considerations of a fast 0?; gate-drive circuit for 1.2 kV SiC JFET devices in phaseleg configuration," in Proc. IEEE Energy Convers. Congr. Expo., 2009, pp. 2293-2300.
17. D. Domes, R. Werner, W. Hofmann, K. Domes, and S. Kraub, "A new, universal and fast switching gate-drive-concept for SiC-JFETs based on current source principle," in Proc. IEEE 37th Power Electron. Spec. Conf., 2006, pp. 1-6.
18. K. Mino, S. Herold, and J. W. Kolar, "A gate drive circuit for silicon carbide JFET," in Proc. IEEE 29th Annu. Conf. Ind. Electron. Soc., 2003, vol. 2, pp. 1162-1166.
19. I. Abuishmais, S. Basu, and T. M. Undeland, "On understanding and driving SiC power JFETs," in Proc. IEEE 26th Annu. Appl. Power Electron. Conf. Expo., 2011, pp. 1071-1075.
20. B. Wrzecionko, D. Bortis, J. Biela, and J. Kolar, "Novel AC coupled gate driver for ultra fast switching of normally-Off SiC JFETs," in Proc. 36th Annu. Conf. Ind. Electron. Soc., 2011, pp. 605-612.
21. Two-Stage Opto Coupled Gate Driver Demo Board, SemiSouth Lab., Inc., Starkville, MS, USA, Feb. 2010.
22. J. Rabkowski, D. Peftitsis, H.-P. Nee, andM. Zdanowski, "A simple highperformance low-loss current-source driver for SiC bipolar transistors," in Proc. 7th Int. Power Electron.Motion Control Conf., 2012, pp. 222-228.
23. J. Rabkowski, G. Tolstoy, D. Peftitsis, and H. Nee, "Low-loss highperformance base-drive unit for SiC BJTs," IEEE Trans. Power Electron., vol. 27, no. 5, pp. 2633-2643, May 2012.
24. B.Wang and G. Venkataramanan, "Analytical modeling of semiconductor losses in matrix converters," in Proc. CES/IEEE 5th Int. Power Electron. Motion Control Conf., 2006, pp. 1-8.
25. K. Jun-Koo, H. Hara, E. Yamamoto, and E.Watanabe, "Analysis and evaluation of bi-directional power switch losses for matrix converter drive," in Proc. 37th IAS Annu. Meeting Conf. Rec. Ind. Appl. Conf., 2002, vol. 1, pp. 438-443. (Pubitemid 35413458)
26. F. Schafmeister, S. Herold, and J. W. Kolar, "Evaluation of 1200 V-Si-IGBTs and 1300 V-SiC-JFETs for application in three-phase very sparse matrix AC-AC converter systems," in Proc. IEEE 18th Annu. Appl. Power Electron. Conf. Expo., 2003, vol. 1, pp. 241-255.
27. M. Jussila andH. Tuusa, "Semiconductor power loss comparison of spacevector modulated direct and indirect matrix converter," in Proc. Power Convers. Conf., 2007, pp. 831-838. (Pubitemid 47468605)