Quantum Hall effect in black phosphorus two-dimensional electron system

Nature Nanotechnology

Volumn 11, Issue 7, 2016, Pages 593-597

  Li, Likai ^a,b   Yang, Fangyuan ^a,b   Ye, Guo Jun ^b,c,d   Zhang, Zuocheng ^e   Zhu, Zengwei ^f   Lou, Wenkai ^d,g   Zhou, Xiaoying ^d,g   Li, Liang ^f   Watanabe, Kenji ^h   Taniguchi, Takashi ^h   Chang, Kai ^d,g   Wang, Yayu ^e   Chen, Xian Hui ^b,c,d   Zhang, Yuanbo ^a,b  

^a FUDAN UNIVERSITY   (China)

^b School of Electronic Science and Engineering   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e TSINGHUA UNIVERSITY   (China)

^f HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^g INSTITUTE OF SEMICONDUCTORS   (China)

^h NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; FUNCTIONAL MATERIALS; GRAPHITE; HALL MOBILITY; MOLECULAR PHYSICS; PHOSPHORUS; QUANTUM CHEMISTRY; QUANTUM THEORY; SPIN HALL EFFECT; VAN DER WAALS FORCES;

BACK GATES; CONDENSED MATTER; DEVICE APPLICATION; HIGH QUALITY; LANDAU LEVELS; QUANTUM TRANSPORT; TWO-DIMENSIONAL ELECTRON SYSTEM; VAN DER WAALS;

QUANTUM HALL EFFECT;

BLACK PHOSPHORUS; GRAPHITE; PHOSPHORUS; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL STRUCTURE; EMBEDDING; ENERGY TRANSFER; PRIORITY JOURNAL; QUANTUM CHEMISTRY; QUANTUM HALL EFFECT;

EID: 84961743078     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2016.42     Document Type: Article

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