Even-denominator fractional quantum Hall physics in ZnO

Nature Physics

Volumn 11, Issue 4, 2015, Pages 347-351

  Falson, J ^a   Maryenko, D ^b   Friess, B ^c   Zhang, D ^c   Kozuka, Y ^a   Tsukazaki, A ^d,e   Smet, J H ^c   Kawasaki, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN Center for Emergent Matter Science   (Japan)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d TOHOKU UNIVERSITY   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; GROUND STATE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; QUANTUM COMPUTERS; QUANTUM HALL EFFECT; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

EXPOSED TO; HIGH QUALITY; LANDAU LEVEL FILLING FACTORS; ORBITAL CHARACTER; QUANTUM HALL; TUNABILITIES; TWO-DIMENSIONAL ELECTRON SYSTEM;

QUANTUM THEORY;

EID: 84926450949     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys3259     Document Type: Article

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