Pressure-Induced Electronic Transition in Black Phosphorus

Physical Review Letters

Volumn 115, Issue 18, 2015, Pages

  Xiang, Z J ^a,b   Ye, G J ^a,b   Shang, C ^a,b   Lei, B ^a,b   Wang, N Z ^a,b   Yang, K S ^c   Liu, D Y ^c   Meng, F B ^a,b   Luo, X G ^a,b,f   Zou, L J ^c   Sun, Z ^d,f   Zhang, Y ^e,f   Chen, X H ^a,b,f  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c INSTITUTE OF SOLID STATE PHYSICS   (China)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e FUDAN UNIVERSITY   (China)

^f NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COLOSSAL MAGNETORESISTANCE; DISPERSIONS; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI SURFACE; HYDROSTATIC PRESSURE; TOPOLOGY;

DENSITY OF STATE; ELECTRONIC TOPOLOGICAL TRANSITION; ELECTRONIC TRANSITION; ELECTRONS AND HOLES; ELEMENTAL SEMICONDUCTORS; FERMI SURFACE TOPOLOGY; POSITIVE MAGNETORESISTANCE; SHUBNIKOV DE-HAAS OSCILLATION;

PHOSPHORUS;

EID: 84946594193     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.115.186403     Document Type: Article

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