De-embedding techniques for nanoscale characterization of semiconductors by scanning microwave microscopy

Microelectronic Engineering

Volumn 159, Issue , 2016, Pages 64-69

  Michalas, L ^a   Brinciotti, E ^b   Lucibello, A ^a   Gramse, G ^c   Joseph, C H ^a   Kienberger, F ^b   Proietti, E ^a   Marcelli, R ^a  

^a CNR   (Italy)

^b KEYSIGHT TECHNOLOGIES   (United States)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

De embedding; Nanoscale; Semiconductors; SMM

Indexed keywords

CAPACITANCE; ELECTROSTATIC FORCE; NANOTECHNOLOGY; SEMICONDUCTOR MATERIALS;

DE-EMBEDDING; ELECTROSTATIC FORCE MICROSCOPY; EXPERIMENTAL COMPARISON; EXPERIMENTAL VERIFICATION; NANO SCALE; NANOSCALE CHARACTERIZATION; SCANNING MICROWAVE MICROSCOPIES; SEMICONDUCTOR CHARACTERIZATION;

ELECTRIC FORCE MICROSCOPY;

EID: 84959556046     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2016.02.039     Document Type: Article

References (21)

1. D.E. Steinhauer, C.P. Vlahacos, S.K. Dutta, F.C. Wellstood, and Steven M. Anlage Surface resistance imaging with a scanning near-field microwave microscope Appl. Phys. Lett. 71 1997 1736 10.1063/1.120020
2. M. Tabib-Azar, D.-P. Su, A. Pohar, S.R. LeClair, and G. Ponchak 0.4 μm spatial resolution with 1 GHz (λ = 30 cm) evanescent microwave probe Rev. Sci. Instrum. 70 1999 1725 10.1063/1.1149658
3. C. Gao, B. Hu, P. Zhang, M. Huang, W. Liu, and I. Takeuchi Quantitative microwave evanescent microscopy of dielectric thin films using a recursive image charge approach Appl. Phys. Lett. 84 2004 4647 10.1063/1.1759389
4. A. Tselev, S.M. Anlage, Z. Ma, and J. Melngailis Broadband dielectric microwave microscopy on micron length scales Rev. Sci. Instrum. 78 2007 044701 10.1063/1.2719613
5. M. Farina, D. Mencarelli, A. Di Donato, G. Venanzoni, and A. Morini Calibration Protocol for broadband near-field microwave microscopy IEEE Trans. Microwave Theory Tech. 59 2011 2769 10.1109/TMTT.2011.2161328
6. H. Happy, K. Haddadi, D. Theron, T. Larsi, and G. Dambrine Measurement techniques for RF nanoelectronics devices IEEE Microw. Mag. 15 2014 30 39 10.1109/MMM.2013.2288710
7. T. Dargent, K. Haddadi, T. Lasri, N. Clément, D. Ducatteau, B. Legrand, H. Tanbakuchi, and D. Theron An intereforemtric scanning microwave microscope and calibration method for sub-fF microwave measurements Rev. Sci. Instrum. 84 2013 123705 10.1063/1.4848995
8. H.P. Huber, M. Moertelmeier, T.M. Wallis, C.J. Chiang, M. Hochleitner, A. Imtiaz, Y.J. Oh, K. Schilcher, M. Dieudonne, J. Smoliner, P. Hinterdorfer, S.J. Rosner, H. Tanbakuchi, P. Kabos, and F. Kienberger Calibrated nanoscale capacitance measurements using scanning microwave microscopy Rev. Sci. Instrum. 81 2010 113701 10.1063/1.3491926
9. G. Gramse, M. Kasper, L. Fumagalli, G. Gomila, P. Hinterdorfer, and F. Kienberger Calibrated complex impendance and permittivity measurements with scanning microwave microscopy Nanotechnology 25 2014 145703 10.1088/0957-4484/25/14/145703
10. L. Michalas, A. Lucibello, C.H. Joseph, E. Brinciotti, F. Kienberger, E. Proietti, and R. Marcelli Nanoscale characterization of MOS systems by microwaves: Dopant profiling calibration IEEE Proceedings of EUROSOI-ULIS 2015, Joint International EUROSOI Workshop and International Conference of Ultimate Integration in Silicon, Bologna, Italy, 26-28 January 2015 2015 269 272 10.1109/ULIS.2015.7063825
11. L. Michalas, A. Lucibello, G. Badino, C.H. Joseph, E. Brinciotti, F. Kienberger, E. Proietti, and R. Marcelli Scanning microwave microscopy for nanoscale characterization of semiconductors: De-embedding reflection contact mode measurements IEEE-EuMA Proceedings of 45th EuMW, European Microwave Conference, Paris, France 5-11 September 2015 2015 159 162 10.13140/RG.2.1.2050.3520
12. S.M. Sze Physics of Semiconductor Device 1981 John Wiley & Sons NY
13. J. Smoliner, H.P. Huber, M. Hochleitner, M. Moertelmaier, and F. Kienberger Scanning microwave microscopy/spectroscopy for metal-oxide-semiconductor systems J. Appl. Phys. 108 2010 064315 10.1063/1.3482065
14. K. Torigoe, M. Arita, and T. Motooka Sensitivity analysis of microwave microscopy for nano scale dopant measurements in Si J. Appl. Phys. 112 2012 104325 10.1063/1.4765730
15. See Rmnano.com for information about AFM/SMM tips
16. N. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada Growth of native oxide on a silicon surface J. Appl. Phys. 68 1990 1272 10.1063/1.347181
17. Y.J. Oh, H.P. Huber, M. Hochleitner, M. Duman, B. Bozna, M. Kastner, F. Kienberger, and P. Hinterdorfer High-frequency electromagnetic dynamics properties of THP1 cell using scanning microwave microscopy Ultramicroscopy 111 2011 1625 1629 10.1016/j.ultramic.2011.09.005
18. A.O. Oladipo, M. Kasper, S. Lavdas, G. Gramse, F. Kienberger, and N.C. Panoiu Three-dimensional finite-element simulations of scanning microwave microscope cantilever for imaging at the nanoscale Appl. Phys. Lett. 103 2013 213106 10.1063/1.4832456
19. F. Wang, N. Clément, D. Ducatteau, D. Troadec, H. Tanbakuchi, B. Legrand, G. Dambrine, and D. Théron Nanotechnology 25 2014 405703 10.1088/0957-4484/25/40/405703
20. A.J. Haemmerli, N. Harjee, M. Koenig, A.G.F. Garcia, D.G. Gordon, and B.L. Pruitt Self-sensing cantilevers with integrated conductive coaxial tips for high-resolution electrical scanning probe metrology J. Appl. Phys. 118 2015 034036 10.1063/1.4923231
21. I. Humer, C. Eckhardt, H.P. Huber, F. Kienberger, and J. Smoliner Tip geometry effects in dopant profiling by scanning microwave microscopy J. Appl. Phys. 111 2012 044314 10.1063/1.3686748