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Journal of Applied Physics

Volumn 112, Issue 10, 2012, Pages

Sensitivity analysis of scanning microwave microscopy for nano-scale dopant measurements in Si

(3) Torigoe, Kazuhisa a,b Arita, Makoto a Motooka, Teruaki a

a KYUSHU UNIVERSITY (Japan)

b SUMCO CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DISTRIBUTIONS; DOPING CONCENTRATION; ELECTRON CONCENTRATION; EQUIVALENT-CIRCUIT MODEL; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MICROWAVE MICROSCOPY; NANO SCALE; SI-BASED;

NANOTECHNOLOGY; SEMICONDUCTOR DOPING; SILICON;

SEMICONDUCTING SILICON;

EID: 84870723718 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4765730 Document Type: Article

Times cited : (15)

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