Nonradiative Electron-Hole Recombination Rate Is Greatly Reduced by Defects in Monolayer Black Phosphorus: Ab Initio Time Domain Study

Journal of Physical Chemistry Letters

Volumn 7, Issue 4, 2016, Pages 653-659

  Long, Run ^a   Fang, Weihai ^a   Akimov, Alexey V ^b  

^a BEIJING NORMAL UNIVERSITY   (China)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON-PHONON INTERACTIONS; ELECTRONS; ENERGY DISSIPATION; LUMINESCENCE; MONOLAYERS; PHONONS; PHOSPHORUS; SEMICONDUCTOR DEVICES; TIME DOMAIN ANALYSIS;

DEFECTS IN SEMICONDUCTORS; ELECTRON HOLE RECOMBINATION RATE; ELECTRON PHONON COUPLINGS; ELECTRON-HOLE RECOMBINATION; LUMINESCENCE LINES; NONRADIATIVE RECOMBINATION RATES; TIME-DOMAIN SIMULATIONS; VIBRATIONAL MODES;

DEFECTS;

EID: 84959019518     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/acs.jpclett.6b00001     Document Type: Article

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