Relaxation of photoexcited electrons at a nanostructured Si(111) surface

Journal of Physical Chemistry Letters

Volumn 1, Issue 7, 2010, Pages 1073-1077

  Kilin, Dmitri S ^a   Micha, David A ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AG CLUSTERS; CHARGE-SEPARATED STATE; ELECTRON TRANSFER; ELECTRONIC CHANGES; ELECTRONIC REDISTRIBUTION; ELECTRONIC RELAXATION TIME; ENERGY BAND; EXPERIMENTAL VALUES; LOCALIZED STATE; NANO-STRUCTURED; NANOSTRUCTURED SEMICONDUCTOR; PHOTO-INDUCED; PHOTOEXCITED ELECTRONS; POPULATION DENSITY DISTRIBUTION; SEMICONDUCTOR SYSTEMS; SHORT PULSE; SI (1 1 1); TIME EVOLUTIONS; TIME-DEPENDENT DENSITY MATRIX;

ELECTRON MOBILITY; ELECTRONIC STRUCTURE; SEMICONDUCTING SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77949741603     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz100122f     Document Type: Article

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