Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys

Frontiers in Energy Research

Volumn 2, Issue JUL, 2014, Pages

  Su, Sheng Han ^a,b   Hsu, Wei Ting ^c   Hsu, Chang Lung ^a   Chen, Chang Hsiao ^a   Chiu, Ming Hui ^a   Lin, Yung Chang ^d   Chang, Wen Hao ^c   Suenaga, Kazu ^d   He, Jr Hau ^b   Li, Lain Jong ^a  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Band gap tuning; Layered materials; MoS 2; MoSe 2; Transition metal dichalcogenides; Two dimensional materials; WS 2; WSe 2

Indexed keywords

EID: 85020169373     PISSN: None     EISSN: 2296598X     Source Type: Journal    
DOI: 10.3389/fenrg.2014.00027     Document Type: Article

References (39)

1. 2 field-effect transistors prepared by chemical vapor deposition. Appl. Phys. Lett. 102, 193107. doi: 10.1063/1.4804546.
2. Bernardi, M., Palummo, M., and Grossman, J. C. (2013). Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664-3670. doi:10.1021/nl401544y.
3. Chang, Y.-H., Wu, F.-Y., Chen, T.-Y., Hsu, C.-L., Chen, C.-H., Wiryo, F., et al. (2014). Three-dimensional molybdenum sulfide sponges for electrocatalytic water splitting. Small 5, 895-900. doi:10.1002/smll.201302407.
4. Chen, Y., Xi, J., Dumcenco, D. O., Liu, Z., Suenaga, K., Wang, D., et al. (2013). Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys. ACS Nano 5, 4610-4616. doi:10.1021/nn401420h.
5. Feng, J., Qian, X., Huang, C.-W., and Li, J. (2012). Strain-engineered artificial atom as a broad-spectrum solar energy funnel. Nat. Photon 6, 866-872. doi:10.1038/nphoton.2012.285.
6. Ghorbani-Asl, M., Borini, S., Kuc, A., and Heine, T. (2013). Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides. Phys. Rev. B 87, 235434. doi:10.1103/PhysRevB.87.235434.
7. Gong, Y., Liu, Z., Lupini, A. R., Shi, G., Lin, J., Najmaei, S., et al. (2013). Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Lett. 14, 442-449. doi:10.1021/nl4032296.
8. Hsu, W.-T., Zhao, Z.-A., Li, L.-J., Chen, C.-H., Chiu, M.-H., Chang, P.-S., et al. (2014). Second harmonic generation from artificially stacked transition metal dichalcogenide twisted bilayers. ACS Nano 8, 2951-2958. doi:10.1021/nn500228r.
9. Huang, J.-K., Pu, J., Hsu, C.-L., Chiu, M.-H., Juang, Z.-Y., Chang, Y.-H., et al. (2014). Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano 8, 923-930. doi:10.1021/nn405719x.
10. 2 sheet. ACS Nano 7, 7126-7131. doi:10.1021/nn4024834.
11. Jiang, H. (2012). Electronic band structures of molybdenum and tungsten dichalcogenides by the GW approach. J. Phys. Chem. C 116, 7664-7671. doi:10.1021/jp300079d.
12. 2 from first principles. Phys. Rev. B 85, 115317. doi:10.1103/PhysRevB.85.115317.
13. Kang, J., Tongay, S., Li, J., and Wu, J. (2013). Monolayer semiconducting transition metal dichalcogenide alloys: stability and band bowing. J. Appl. Phys. 113, 143703. doi:10.1063/1.4799126.
14. Komsa, H.-P., and Krasheninnikov, V. A. (2012). Two-dimensional transition metal dichalcogenide alloys: stability and electronic properties. J. Phys. Chem. Lett. 3, 3652-3656. doi:10.1021/jz301673x.
15. 2 films with vertically aligned layers. Nano Lett. 13, 1341-1347. doi:10.1021/nl400258t.
16. Lee, Y.-H., Yu, L., Wang, H., Fang, W., Ling, X., Shi, Y., et al. (2013). Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. Nano Lett. 13, 1852-1857. doi:10.1021/nl400687n.
17. 2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325. doi:10.1002/adma.201104798.
18. (1-x) nanosheets with fully tunable chemical compositions and optical properties. J. Am. Chem. Soc. 136, 3756-3759. doi:10.1021/ja500069b.
19. 2 field effect transistor by surface overlayers. Appl. Phys. Lett. 103, 063109. doi:10.1063/1.4818463.
20. 2 thin layers prepared by MoO3 sulfurization. Nanoscale 4, 6637. doi:10.1039/c2nr31833d.
21. 2 monolayer, bilayer, nanoribbons and nanotubes. Phys. Chem. Chem. Phys. 14, 13035-13040. doi:10.1039/c2cp42181j.
22. Majumdera, P., and Takoudis, C. (2008). Reactively sputtered Mo-V nitride thin films as ternary diffusion barriers for copper metallization. J. Electrochem. Soc. 155, H703-H706. doi:10.1149/1.2955726.
23. 2 : a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805. doi:10.1103/PhysRevLett.105.136805.
24. Mann, J., Ma, Q., Odenthal, P. M., Isarraraz, M., Le, D., Preciado, E., et al. (2014). 2-Dimensional transition metal dichalcogenides with tunable direct band gaps: MoS 2(1-x) Se 2x monolayers. Adv. Mater. 26, 1399-1404. doi:10.1002/adma.201304389.
25. 2 . Nat. Nanotechnol. 8, 497-501. doi:10.1038/nnano.2013.100.
26. 2 nanoribbons by strain engineering. J. Phys. Chem. C 116, 11752-11757. doi:10.1021/jp3015782.
27. 2 . Phys. Rev. B 86, 241401(R). doi:10.1103/PhysRevB.86.241401.
28. Pu, J., Li, L.-J., and Takenobu, T. (2014). Flexible and stretchable thin-film transistors based on molybdenum disulphide. Phys. Chem. Chem. Phys. 16, 14996-15006. doi:10.1039/c3cp55270e.
29. 2 thin-film transistors with ion gel dielectrics. Nano Lett. 12, 4013-4017. doi:10.1021/nl301335q.
30. 2 transistors. Nat. Nanotechnol. 6, 147-150. doi:10.1038/nnano.2010.279.
31. 2 . Nano Lett. 10, 1271-1275. doi:10.1021/nl903868w.
32. Su, S.-H., Hsu, Y.-T., Chang, Y.-H., Chiu, M.-H., Hsu, C.-L., Hsu, W.-T., et al. (2014). Band gap-tunable molybdenum sulfide selenide monolayer alloy. Small doi:10.1002/smll.201302893.
33. 2 . Opt. Exp. 21, 4908-4916. doi:10.1364/OE.21.004908.
34. 2 with high broadband photogain and fast optical switching for use in harsh environments. ACS Nano 7, 3905-3911. doi:10.1021/nn305301b.
35. 2 transistors. Nano Lett. 12, 4674-4680. doi:10.1021/nl302015v.
36. 2 flakes by chemical vapor deposition. J. Am. Chem. Soc. 135, 5304-5307. doi:10.1021/ja4013485.
37. Yu, W. J., Li, Z., Zhou, H., Chen, Y., Wang, Y., Huang, Y., et al. (2012). Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 12, 246-252. doi:10.1038/nmat3518.
38. 2 heterostructures. Sci. Rep. 4, 3826. doi:10.1038/srep03826.
39. 2 . Nano Lett. 13, 1007-1015. doi:10.1021/nl304169w.