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Journal of Materials Chemistry C

Volumn 4, Issue 1, 2015, Pages 150-156

Low contact resistance in solid electrolyte-gated ZnO field-effect transistors with ferromagnetic contacts

(7) Hu, Xiaotao a Sun, Jia a Qian, Chuan a Liu, Fangmei a Yang, Junliang a Guo, Guang Hua a Gao, Yongli a,b

a CENTRAL SOUTH UNIVERSITY (China)

b UNIVERSITY OF ROCHESTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; CONTACT RESISTANCE; CONTACTS (FLUID MECHANICS); ELECTRIC FIELDS; ELECTRODES; ELECTROLYTES; FERROMAGNETIC MATERIALS; FERROMAGNETISM; OHMIC CONTACTS; SOLID ELECTROLYTES; TRANSISTORS; ZINC OXIDE;

FERROMAGNETIC CONTACTS; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; SOURCE AND DRAIN ELECTRODES; SPIN DIFFUSIONS; SPIN-POLARIZED CHARGES; SPINTRONIC DEVICE; TRANSISTOR PERFORMANCE;

FIELD EFFECT TRANSISTORS;

EID: 84951175417 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c5tc02873f Document Type: Article

Times cited : (7)

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