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Nanoscale

Volumn 5, Issue 10, 2013, Pages 4230-4235

Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating

(4) Lokteva, Irina a Thiemann, Stefan a Gannott, Florentina a Zaumseil, Jana a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HYSTERESIS; IONIC LIQUIDS; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DOPING;

COMPLEMENTARY INVERTERS; FIELD EFFECT TRANSISTOR (FETS); FUNDAMENTAL STUDIES; LARGE EFFECTIVE; LOW HYSTERESIS; PRINTED ELECTRONICS; SCHOTTKY BARRIERS; SEMICONDUCTOR NANOWIRE;

ELECTROLYTES;

EID: 84877770014 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr33723e Document Type: Article

Times cited : (17)

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