Tunable surface electron spin splitting with electric double-layer transistors based on InN

Nano Letters

Volumn 13, Issue 5, 2013, Pages 2024-2029

  Yin, Chunming ^a   Yuan, Hongtao ^b   Wang, Xinqiang ^a   Liu, Shitao ^a   Zhang, Shan ^a   Tang, Ning ^a   Xu, Fujun ^a   Chen, Zhuoyu ^b   Shimotani, Hidekazu ^b   Iwasa, Yoshihiro ^b   Chen, Yonghai ^c   Ge, Weikun ^d   Shen, Bo ^a  

^a PEKING UNIVERSITY   (China)

^b UNIVERSITY OF TOKYO   (Japan)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d TSINGHUA UNIVERSITY   (China)

Author keywords

circular photogalvanic effect; InN; ionic liquid; Surface electron accumulation

Indexed keywords

ELECTRIC DOUBLE-LAYER TRANSISTORS; EPITAXIAL THIN FILMS; INN; PHOTOGALVANIC EFFECTS; RASHBA SPIN-ORBIT COUPLING; SURFACE BAND BENDING; SURFACE ELECTRON ACCUMULATION; TWO-DIMENSIONAL ELECTRON SYSTEM;

ELECTRIC FIELDS; IONIC LIQUIDS; MAGNETIC MOMENTS; MAGNETOELECTRONICS; QUANTUM COMPUTERS; SPIN DYNAMICS; SPIN POLARIZATION;

ELECTROSPINNING;

EID: 84877267018     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl400153p     Document Type: Article

References (32)

1. Žutić, I.; Fabian, J.; Das Sarma, S. Spintronics: Fundamentals and applications Rev. Mod. Phys. 2004, 76, 323
2. Awschalom, D. D.; Flatté, M. E. Challenges for semiconductor spintronics Nat. Phys. 2007, 3, 153-159
3. Kotissek, P.; Bailleul, M.; Sperl, M.; Spitzer, A.; Schuh, D.; Wegscheider, W.; Back, C. H.; Bayreuther, G. Cross-sectional imaging of spin injection into a semiconductor Nat. Phys. 2007, 3, 872-877
4. Fiederling, R.; Kleim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W. Injection and detection of a spin-polarized current in a light-emitting diode Nature 1999, 402, 787-790
5. Hall, K. C.; Lau, W. H.; GündogÌdu, K.; Flatté, M. E.; Boggess, T. F. Nonmagnetic semiconductor spin transistor Appl. Phys. Lett. 2003, 83, 2937
6. Kato, Y. K.; Myers, R. C.; Gossard, A. C.; Awschalom, D. D. Observation of the spin Hall effect in semiconductors Science 2004, 306, 1910-1913
7. Valenzuela, S. O.; Tinkham, M. Direct electronic measurement of the spin Hall effect Nature 2006, 442, 176-179
8. Ando, K.; Saitoh, E. Observation of the inverse spin Hall effect in silicon Nat. Commun. 2012, 3, 629
9. Wunderlich, J.; Park, B. G.; Irvine, A. C.; Zaîrbo, L. P.; Rozkotová, E.; Nemec, P.; Novák, V.; Sinova, J.; Jungwirth, T. Spin Hall effect transistor Science 2010, 330, 1801-1804
10. Mahboob, I.; Veal, T. D.; McConville, C. F.; Lu, H.; Schaff, W. J. Intrinsic electron accumulation at clean InN surfaces Phys. Rev. Lett. 2004, 92, 036804
11. Noguchi, M.; Hirakawa, K.; Ikoma, T. Intrinsic Electron accumulation layers on reconstructed clean InAs (100) surfaces Phys. Rev. Lett. 1991, 66, 2243
12. Jia, Z. W.; Shen, W. Z.; Ogawa, H.; Guo, Q. X. Electron dephasing in wurtzite indium nitride thin films Appl. Phys. Lett. 2006, 89, 232107
13. Zhang, Z.; Zhang, R.; Liu, B.; Xie, Z. L.; Xiu, X. Q.; Han, P.; Lu, H.; Zheng, Y. D.; Chen, Y. H.; Tang, C. G.; Wang, Z. G. Circular photogalvanic effect at inter-band excitation in InN Solid State Commun. 2008, 145, 159-162
14. Petersen, G.; Estévez Hernández, S.; Calarco, R.; Demarina, N.; SchäPers, Th. Spin-orbit coupling and phase-coherent transport in InN nanowires Phys. Rev. B 2009, 80, 125321
15. Mei, F. H.; Tang, N.; Wang, X. Q.; Duan, J. X.; Zhang, S.; Chen, Y. H.; Ge, W. K.; Shen, B. Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films Appl. Phys. Lett. 2012, 101, 132404
16. 0.48As Heterostructure Phys. Rev. Lett. 1997, 78, 1335
17. 1- xAs/InP quantum wells for B →0 Phys. Rev. B 1997, 55, R1958
18. Kunihashi, Y.; Kohda, M.; Sanada, H.; Gotoh, H.; Sogawa, T.; Nitta, J. Proposal of spin complementary field effect transistor Appl. Phys. Lett. 2012, 100, 113502
19. Kohda, M.; Lechner, V.; Kunihashi, Y.; Dollinger, T.; Olbrich, P.; Schönhuber, C.; Caspers, I.; Bel'kov, V. V.; Golub, L. E.; Weiss, D.; Richter, K.; Nitta, J.; Ganichev, S. D. Gate-controlled persistent spin helix state in (In,Ga)As quantum wells Phys. Rev. B 2012, 86, 081306(R)
20. Denisenko, A.; Pietzka, C.; Chuvilin, A.; Kaiser, U.; Lu, H.; Schaff, W. J.; Kohn, E. J. Depletion of surface accumulation charge in InN by anodic oxidation J. Appl. Phys. 2009, 105, 033702
21. Liu, W.; Tan, R. J. N.; Soh, C. B.; Chua, S. J. The effects of cap layers on electrical properties of indium nitride films Appl. Phys. Lett. 2010, 97, 042110
22. Yuan, H. T.; Shimotani, H.; Tsukazaki, A.; Ohtomo, A.; Kawasaki, M.; Iwasa, Y. High-density carrier accumulation in ZnO field-effect transistors gated by electric double layers of Ionic Liquids Adv. Funct. Mater. 2009, 19, 1046-1053
23. Ye, J. T.; Inoue, S.; Kobayashi, K.; Kasahara, Y.; Yuan, H. T.; Shimotani, H.; Iwasa, Y. Liquid-gated interface superconductivity on an atomically flat film Nat. Mater. 2010, 9, 125-128
24. Ganichev, S. D.; Ivchenko, E. L.; Prettl, W. Photogalvanic effects in quantum wells Physica E 2002, 14, 166-171
25. Ganichev, S. D.; Prettl, W. Spin photocurrents in quantum wells J. Phys.: Condens. Matter 2003, 15, R935
26. Ivchenko, E. L.; Ganichev, S. Spin-Photogalvanics. In Spin Physics in Semiconductors; Dyakonov, M. I., Ed.; Springer: New York, 2008; pp 245-277.
27. Winkler, R. Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems; Springer: Berlin, 2003.
28. Ganichev, S. D.; Bel'kov, V. V.; Schneider, P.; Ivchenko, E. L.; Tarasenko, S. A.; Wegscheider, W.; Weiss, D.; Schuh, D.; Beregulin, E. V.; Prettl, W. Resonant inversion of the circular photogalvanic effect in n-doped quantum wells Phys. Rev. B 2003, 68, 035319
29. Zhang, Q.; Wang, X. Q.; He, X. W.; Yin, C. M.; Xu, F. J.; Shen, B.; Chen, Y. H.; Wang, Z. G.; Ishitani, Y.; Yoshikawa, A. Lattice polarity detection of InN by circular photogalvanic effect Appl. Phys. Lett. 2009, 95, 031902
30. Sturman, B. I.; Fridkin, V. M. The Photovoltaic and Photorefractive Effects. In Noncentrosymmetric Materials; translated by Bradley, J. E. S.; Gordon and Breach Science Publishers: New York, 1992.
31. 3 Nano Lett. 2011, 11, 2601
32. Nagata, T.; Koblmuller, G.; Bierwagen, O.; Gallinat, C. S.; Speck, J. S. Surface structure and chemical states of a -plane and c -plane InN films Appl. Phys. Lett. 2009, 95, 132104