Electrical spin injection and detection in Mn5Ge 3/Ge/Mn5Ge3 nanowire transistors

Nano Letters

Volumn 13, Issue 9, 2013, Pages 4036-4043

  Tang, Jianshi ^a   Wang, Chiu Yen ^a,b,c   Chang, Li Te ^a   Fan, Yabin ^a   Nie, Tianxiao ^a   Chan, Michael ^a   Jiang, Wanjun ^a   Chen, Yu Ting ^b   Yang, Hong Jie ^b   Tuan, Hsing Yu ^b   Chen, Lih Juann ^b   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Ge nanowire transistor; Mn5Ge 3; Spin injection and detection; spin transport; spinFET

Indexed keywords

ELECTRICAL SPIN INJECTION; EXPONENTIALLY DECAYS; NANOWIRE TRANSISTORS; SPIN INJECTION AND DETECTIONS; SPIN TRANSPORT; SPIN-DIFFUSION LENGTH; SPIN-FET; TEMPERATURE DEPENDENCE;

FERROMAGNETIC MATERIALS; FERROMAGNETISM; MANGANESE; NANOWIRES; TRANSISTORS;

GERMANIUM;

EID: 84884223326     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl401238p     Document Type: Article

References (52)

1. International Technology Roadmap of Semiconductors, 2012, ed.; http://www.itrs.net; accessed Jan 21, 2013.
2. Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.; Daughton, J. M.; Molnar, S. v.; Roukes, M. L.; Chtchelkanova, A. Y.; Treger, D. M. Spintronics: A Spin-Based Electronics Vision for the Future Science 2001, 294, 1488-1495
3. Žutić, I.; Fabian, J.; Das Sarma, S. Spintronics: Fundamentals and Applications Rev. Mod. Phys. 2004, 76, 323-410
4. Datta, S.; Das, B. Electronic Analog of the Electro-Optic Modulator Appl. Phys. Lett. 1990, 56, 665-667
5. Sugahara, S.; Tanaka, M. A Spin Metal-Oxide-Semiconductor Field-Effect Transistor using Half-Metallic-Ferromagnet Contacts for the Source and Drain Appl. Phys. Lett. 2004, 84, 2307-2309
6. Jonker, B. T.; Kioseoglou, G.; Hanbicki, A. T.; Li, C. H.; Thompson, P. E. Electrical Spin-Injection into Silicon from a Ferromagnetic Metal/Tunnel Barrier Contact Nat. Phys. 2007, 3, 542-546
7. Dash, S. P.; Sharma, S.; Patel, R. S.; de Jong, M. P.; Jansen, R. Electrical Creation of Spin Polarization in Silicon at Room Temperature Nature 2009, 462, 491-494
8. Zhou, Y.; Han, W.; Chang, L.-T.; Xiu, F.; Wang, M.; Oehme, M.; Fischer, I. A.; Schulze, J.; Kawakami, R. K.; Wang, K. L. Electrical Spin Injection and Transport in Germanium Phys. Rev. B 2011, 84, 125323
9. Liu, E.-S.; Nah, J.; Varahramyan, K. M.; Tutuc, E. Lateral Spin Injection in Germanium Nanowires Nano Lett. 2010, 10, 3297-3301
10. Lou, X.; Adelmann, C.; Crooker, S. A.; Garlid, E. S.; Zhang, J.; Reddy, K. S. M.; Flexner, S. D.; Palmstrom, C. J.; Crowell, P. A. Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices Nat. Phys. 2007, 3, 197-202
11. Zhu, H. J.; Ramsteiner, M.; Kostial, H.; Wassermeier, M.; Schönherr, H.-P.; Ploog, K. H. Room-Temperature Spin Injection from Fe into GaAs Phys. Rev. Lett. 2001, 87, 016601
12. Tombros, N.; Jozsa, C.; Popinciuc, M.; Jonkman, H. T.; van Wees, B. J. Electronic Spin Transport and Spin Precession in Single Graphene Layers at Room Temperature Nature 2007, 448, 571-574
13. Han, W.; Pi, K.; McCreary, K. M.; Li, Y.; Wong, J. J. I.; Swartz, A. G.; Kawakami, R. K. Tunneling Spin Injection into Single Layer Graphene Phys. Rev. Lett. 2010, 105, 167202
14. Jedema, F. J.; Filip, A. T.; van Wees, B. J. Electrical Spin Injection and Accumulation at Room Temperature in an All-Metal Mesoscopic Spin Valve Nature 2001, 410, 345-348
15. Jedema, F. J.; Heersche, H. B.; Filip, A. T.; Baselmans, J. J. A.; van Wees, B. J. Electrical Detection of Spin Precession in a Metallic Mesoscopic Spin Valve Nature 2002, 416, 713-716
16. Schmidt, G.; Ferrand, D.; Molenkamp, L. W.; Filip, A. T.; van Wees, B. J. Fundamental Obstacle for Electrical Spin Injection from a Ferromagnetic Metal into a Diffusive Semiconductor Phys. Rev. B 2000, 62, R4790-R4793
17. Li, C. H.; van 't Erve, O. M. J.; Jonker, B. T. Electrical Injection and Detection of Spin Accumulation in Silicon at 500 K with Magnetic Metal/Silicon Dioxide Contacts Nat. Commun. 2011, 2, 245
18. Fert, A.; Jaffrès, H. Conditions for Efficient Spin Injection from a Ferromagnetic Metal into a Semiconductor Phys. Rev. B 2001, 64, 184420
19. Rashba, E. I. Theory of Electrical Spin Injection: Tunnel Contacts as a Solution of the Conductivity Mismatch Problem Phys. Rev. B 2000, 62, R16267-R16270
20. Han, W.; Zhou, Y.; Wang, Y.; Li, Y.; Wong, J. J. I.; Pi, K.; Swartz, A. G.; McCreary, K. M.; Xiu, F.; Wang, K. L.; Zou, J.; Kawakami, R. K. Growth of Single-Crystalline, Atomically Smooth MgO Films on Ge(001) by Molecular Beam Epitaxy J. Cryst. Growth 2009, 312, 44-47
21. Yamane, K.; Hamaya, K.; Ando, Y.; Enomoto, Y.; Yamamoto, K.; Sadoh, T.; Miyao, M. Effect of Atomically Controlled Interfaces on Fermi-Level Pinning at Metal/Ge Interfaces Appl. Phys. Lett. 2010, 96, 162104
22. Dash, S. P.; Sharma, S.; Le Breton, J. C.; Peiro, J.; Jaffrès, H.; George, J. M.; Lemaiître, A.; Jansen, R. Spin Precession and Inverted Hanle Effect in a Semiconductor near a Finite-Roughness Ferromagnetic Interface Phys. Rev. B 2011, 84, 054410
23. Tang, J.; Wang, C.-Y.; Hung, M.-H.; Jiang, X.; Chang, L.-T.; He, L.; Liu, P.-H.; Yang, H.-J.; Tuan, H.-Y.; Chen, L.-J.; Wang, K. L. Ferromagnetic Germanide in Ge nanowire Transistors for Spintronics Application ACS Nano 2012, 6, 5710-5717
24. 3 Nanowire Nano Lett. 2012, 12, 6372-6379
25. 3 Films J. Magn. Magn. Mater. 2000, 221, 248-254
26. Tang, J.; Wang, C.-Y.; Chen, L.-J.; Wang, K. L. Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing, 2012 IEEE 12th Conference on Nanotechnology, Birmingham, U.K., Aug. 20-23, 2012; IEEE: Birmingham, UK, 2012; pp 1-5.
27. Zhou, Y.; Han, W.; Wang, Y.; Xiu, F.; Zou, J.; Kawakami, R. K.; Wang, K. L. Investigating the Origin of Fermi Level Pinning in Ge Schottky Junctions Using Epitaxially Grown Ultrathin MgO Films Appl. Phys. Lett. 2010, 96, 102103
28. 3 Epilayers Phys. Status Solidi B 2005, 242, R67-R69
29. 3 for Spintronic Applications Phys. Rev. B 2004, 70, 235205
30. Iba, S.; Saito, H.; Spiesser, A.; Watanabe, S.; Jansen, R.; Yuasa, S.; Ando, K. Spin Accumulation and Spin Lifetime in p-Type Germanium at Room Temperature Appl. Phys. Express 2012, 5, 053004
31. Yang, H.-J.; Tuan, H.-Y. High-Yield, High-Throughput Synthesis of Germanium Nanowires by Metal-Organic Chemical Vapor Deposition and Their Functionalization and Applications J. Mater. Chem. 2012, 22, 2215-2225
32. 2Ge Nanowire Heterostructure Transistors Nanotechnology 2010, 21, 505704
33. Tang, J.; Wang, C.-Y.; Xiu, F.; Lang, M.; Chu, L.-W.; Tsai, C.-J.; Chueh, Y.-L.; Chen, L.-J.; Wang, K. L. Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors ACS Nano 2011, 5, 6008-6015
34. Tang, J.; Wang, C.-Y.; Xiu, F.; Zhou, Y.; Chen, L.-J.; Wang, K. L. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing Adv. Mater. Sci. Eng. 2011, 2011, 316513
35. Sze, S. M.; Ng, K. K. Physics of Semiconductor Devices; John Wiley & Sons: Hoboken, NJ, 2006.
36. Furukawa, Y. Electrical Properties of Heavily Doped n -Type Germanium J. Phys. Soc. Jpn. 1961, 16, 687-694
37. Hust, J. G.; Lankford, A. B. Update of Thermal Conductivity and Electrical Resistivity of Electrolytic Iron, Tungsten, and Stainless Steel; U.S. Department of Commerce, National Bureau of Standards: Washington, DC, 1984.
38. Tsymbal, E. Y.; Mryasov, O. N.; LeClair, P. R. Spin-Dependent Tunnelling in Magnetic Tunnel Junctions J. Phys.: Condens. Matter 2003, 15, R109-R142
39. Chang, L.-T.; Han, W.; Zhou, Y.; Tang, J.; Fischer, I. A.; Oehme, M.; Schulze, J.; Kawakami, R. K.; Wang, K. L. Comparison of Spin Lifetimes in n -Ge Characterized between Three-Terminal and Four-Terminal Nonlocal Hanle Measurements Semicond. Sci. Technol. 2012, 28, 015018
40. Pramanik, S.; Stefanita, C. G.; Patibandla, S.; Bandyopadhyay, S.; Garre, K.; Harth, N.; Cahay, M. Observation of Extremely Long Spin Relaxation Times in an Organic Nanowire Spin Valve Nat. Nanotechnol. 2007, 2, 216-219
41. Xiong, Z. H.; Wu, D.; Valy Vardeny, Z.; Shi, J. Giant Magnetoresistance in Organic Spin-Valves Nature 2004, 427, 821-824
42. Sadasiv, G. Galvanomagnetic Effects in Heavily Doped p -Type Germanium Phys. Rev. 1964, 133, A1207-A1213
43. Lin, Y.-C.; Chen, Y.; Shailos, A.; Huang, Y. Detection of Spin Polarized Carrier in Silicon Nanowire with Single Crystal MnSi as Magnetic Contacts Nano Lett. 2010, 10, 2281-2287
44. Julliere, M. Tunneling between Ferromagnetic Films Phys. Lett. A 1975, 54, 225-226
45. Sze, S. M.; Irvin, J. C. Resistivity, Mobility and Impurity Levels in GaAs, Ge, and Si at 300 K Solid-State Electron. 1968, 11, 599-602
46. Sasaki, T.; Oikawa, T.; Suzuki, T.; Shiraishi, M.; Suzuki, Y.; Noguchi, K. Temperature Dependence of Spin Diffusion Length in Silicon by Hanle-Type Spin Precession Appl. Phys. Lett. 2010, 96, 122101
47. Balandin, A. A. Nanophononics: Phonon Engineering in Nanostructures and Nanodevices J. Nanosci. Nanotechnol. 2005, 5, 1015-1022
48. Joyce, W. B.; Dixon, R. W. Analytic Approximations for the Fermi Energy of an Ideal Fermi Gas Appl. Phys. Lett. 1977, 31, 354-356
49. 0.95 Quantum Dots Nat. Mater. 2010, 9, 337-344
50. 0.95 Quantum Dots ACS Nano 2010, 4, 4948-4954
51. Liu, L.; Pai, C.-F.; Li, Y.; Tseng, H. W.; Ralph, D. C.; Buhrman, R. A. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum Science 2012, 336, 555-558
52. Behin-Aein, B.; Datta, D.; Salahuddin, S.; Datta, S. Proposal for an All-Spin Logic Device with Built-In Memory Nat. Nanotechnol. 2010, 5, 266-270