Multi-step process control and characterization of scanning probe lithography

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Peterson, C A ^a   Ruskell, T G ^a,c   Pyle, J L ^a   Workman, R K ^a   Yao, X ^a   Hunt, J P ^a   Sarid, D ^a   Parks, H G ^b   Vermeire, B ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b University of Arizona   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AMBIENT WATERS; ATOMIC FORCE MICROSCOPES; CURRENT AMPLIFIER; FEEDBACK SYSTEMS; FOWLER-NORDHEIM; FOWLER-NORDHEIM TUNNELING; IN-PROCESS; LOCAL OXIDATION; MULTI-STEP; N TYPE SILICON; NANO-METER SCALE; NEGATIVE BIAS; NITROGEN ATMOSPHERES; OXIDE LINES; RASTER SCANNING; SCANNING PROBE LITHOGRAPHY; SILICON DIOXIDE; SILICON SURFACES;

ATOMIC FORCE MICROSCOPY; COMPUTER CONTROL SYSTEMS; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; PROBES; PROCESS CONTROL; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON NITRIDE; SILICON OXIDES; WATER VAPOR;

SILICON WAFERS;

EID: 25744462871     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051231     Document Type: Article

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