Kinetics of field-induced oxidation of hydrogen-terminated Si(111) by means of a scanning force microscope

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2845-2849

  Ley, L ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

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[No Author keywords available]

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EID: 0009611459     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (26)

1. P. J. Jorgensen, J. Chem. Phys. 37, 874 (1962).
2. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennet, Appl. Phys. Lett. 56, 2001 (1990).
3. H. C. Day and D. R. Allee, Appl. Phys. Lett. 62, 2691 (1993).
4. T. Hattori, Y. Ejiri, K. Saito, and M. Yasutake, J. Vac. Sci. Technol. A 12, 2586 (1994).
5. D. Wang, L. Tsau, and K. L. Wang, Appl. Phys. Lett. 65, 1415 (1994).
6. E. S. Snow and P. M. Campbell, Appl. Phys. Lett. 64, 1932 (1994).
7. See for example, R. Wiesendanger, Appl. Surf. Sci. 54, 271 (1992).
8. T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen, and L. Ley, Appl. Phys. Lett. 66, 2499 (1995).
9. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
10. T. Yasaka, K. Kanda, K. Sawara, S. Miyazaki, and M. Hirose, Jpn. J. Appl. Phys. 30, 3567 (1991).
11. Y. Homma, M. Suzuki, and N. Yabumoto, J. Vac. Sci. Technol. A 10, 2055 (1992).
12. L. Tsau, D. Wang, and K. L. Wang, Appl. Phys. Lett. 64, 2133 (1994).
13. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
14. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
15. J. Blanc, Philos. Mag. B 55, 685 (1987).
16. M. A. Hopper, R. A. Clarke, and L. Young, J. Electrochem. Soc. 122, 1216 (1975).
17. N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1948).
18. F. Lukeš, Surf. Sci. 30, 91 (1972).
19. B. Carrière, J. P. Deville, and A. El Maachi, Philos. Mag. B 55, 721 (1987).
20. N. Kramer, M. R. van den Berg, and C. Schönberger, presented at IVC-13/ICSS-9, Yokohama, 1995.
21. A. Reisman, E. H. Nicollian, C. K. Williams, and C. J. Merz, J. Electron. Mater. 16, 45 (1987).
22. P. De Wolf, J. Snauwaert, T. Clarysse, W. Vandervorst, and L. Hellemanns, Appl. Phys. Lett. 66, 1530 (1995).
23. R. S. Becker, G. S. Higashi, Y. J. Chabal, and A. J. Becker, Phys. Rev. Lett. 65, 1719 (1990).
24. M. Schwartzkopff, P. Radojkovic, M. Enachescu, and E. Hartmann, Verhandl. DPG (VI) 30, 1546 (1995).
25. E. H. Nicollian and A. Reismann, J. Electron. Mater. 17, 263 (1988).
26. L. Li and J. Peeters, J. Appl. Phys. 74, 639 (1993).