Extending lifetime of flash memory using strong error correction coding

IEEE Transactions on Consumer Electronics

Volumn 61, Issue 2, 2015, Pages 206-214

  Kim, Chanha ^a   Park, Chanik ^b   Yoo, Sungjoo ^c   Lee, Sunggu ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

Error correction code; Flash memory lifetime; NAND flash memory; Reliability

Indexed keywords

BIT ERROR RATE; CODES (SYMBOLS); DATA COMMUNICATION EQUIPMENT; DIGITAL STORAGE; ERROR CORRECTION; ERRORS; HARD DISK STORAGE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY;

ERROR CORRECTION CODES; ERROR CORRECTION CODING; GARBAGE COLLECTION; LIFETIME EXTENSION; NAND FLASH MEMORY; PERFORMANCE LOSS; STORAGE CAPACITY; UNCORRECTABLE ERRORS;

FLASH MEMORY;

EID: 84946914141     PISSN: 00983063     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCE.2015.7150595     Document Type: Article

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