He plasma treatment of transparent conductive ZnO thin films

Applied Surface Science

Volumn 355, Issue , 2015, Pages 702-705

  Yao, Jian Ke ^a   Chen, Shuming ^a   Sun, Xiao Wei ^a   Kwok, Hoi Sing ^b  

^a SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Conductive ZnO thin film; He plasma treating; Interstitial Zn and O vacancy deficiencies; Work function

Indexed keywords

ARGON; CARRIER CONCENTRATION; CONDUCTIVE FILMS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; HELIUM; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; PLASMA APPLICATIONS; WORK FUNCTION; ZINC OXIDE;

ETCHING EFFECT; O VACANCIES; OXYGEN SPECIES; PLASMA TREATMENT; SHALLOW DONORS; THICKNESS OF FILMS; TRANSPARENT CONDUCTIVE; ZNO THIN FILM;

THIN FILMS;

EID: 84944318213     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.07.165     Document Type: Article

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