Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Applied Physics Letters

Volumn 104, Issue 2, 2014, Pages

  Jeong, Ho Young ^a,b   Lee, Bok Young ^b   Lee, Young Jang ^b   Lee, Jung Il ^b   Yang, Myoung Su ^b   Kang, In Byeong ^b   Mativenga, Mallory ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

^b LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER-TREATMENT; CHANNEL LENGTH; FIELD-EFFECT MOBILITIES; PLASMA TREATMENT; SOURCE/DRAIN REGIONS; THERMAL-ANNEALING; THERMALLY STABLE; THIN-FILM TRANSISTOR (TFTS);

GALLIUM; INDIUM; PHOTOELECTRONS; PLASMA APPLICATIONS; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

ANNEALING;

EID: 84893145700     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4862320     Document Type: Article

References (19)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004). 10.1038/nature03090
2. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 89, 112123 (2006). 10.1063/1.2353811
3. M. Mativenga, J. K. Um, D. H. Kang, R. K. Mruthyunjaya, J. H. Chang, G. N. Heiler, T. J. Tredwell, and J. Jang, IEEE Trans. Electron Devices 59, 2501 (2012). 10.1109/TED.2012.2205258
4. M. Mativenga, D. Geng, J. H. Chang, T. J. Tredwell, and J. Jang, IEEE Electron Device Lett. 33, 824 (2012). 10.1109/LED.2012.2191132
5. J. G. Um, M. Mativenga, P. Migliorato, and J. Jang, Appl. Phys. Lett. 101, 113504 (2012). 10.1063/1.4751849
6. M. Mativenga, M. H. Choi, J. W. Choi, and J. Jang, IEEE Electron Device Lett. 32, 170 (2011). 10.1109/LED.2010.2093504
7. J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and S. I. Kim, Appl. Phys. Lett. 90, 262106 (2007). 10.1063/1.2753107
8. H. S. Shin, B. D. Ahn, K. H. Kim, J. S. Park, and H. J. Kim, Thin Solid Films 517, 6349 (2009). 10.1016/j.tsf.2009.02.071
9. B. D. Ahn, H. S. Shin, G. H. Kim, J. S. Park, and H. J. Kim, Jpn. J. Appl. Phys., Part 1 48, 03B019 (2009). 10.1143/JJAP.48.03B019
10. S. W. Tsao, T. C. Chang, S. Y. Huang, M. C. Chen, C. T. Tsai, Y. J. Kuo, Y. C. Chen, and W. C. Wu, Solid-State Electron. 54, 1497 (2010). 10.1016/j.sse.2010.08.001
11. R. Hayasi, A. Sato, M. Ofuji, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, SID Symp. Dig. Tech. 39, 621 (2008) 10.1889/1.3069739.
12. A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 94, 133502 (2009) 10.1063/1.3112566.
13. D. L. Wood and J. Tauc, Phys. Rev. B 5, 3144 (1972). 10.1103/PhysRevB.5. 3144
14. Z. Y. Xie, H. L. Lu, S. S. Xu, Y. Geng, and Q. Q. Sun, Appl. Phys. Lett. 101, 252111 (2012). 10.1063/1.4773299
15. M. Chen, Z. L. Pei, C. Sun, L. S. Wen, and X. Wang, J. Cryst. Growth 220, 254 (2000). 10.1016/S0022-0248(00)00834-4
16. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Appl. Phys. Lett. 82, 1117 (2003). 10.1063/1.1553997
17. Y. Hanyu, K. Domen, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono, and T. Kamiya, Appl. Phys. Lett. 103, 202114 (2013). 10.1063/1.4832076
18. P. Bhattacharya, M. Bari, and K. Rao, Jpn. J. Appl. Phys., Part 1 32, 3409 (1993). 10.1143/JJAP.32.3409
19. D. H. Kang, J. U. Han, M. Mativenga, S. H. Ha, and J. Jang, Appl. Phys. Lett. 102, 083508 (2013). 10.1063/1.4793996