Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Applied Physics Letters

Volumn 102, Issue 22, 2013, Pages

  Kang, Jung Han ^a   Namkyu Cho, Edward ^a   Eun Kim, Chang ^b   Lee, Min Jung ^a   Jeong Lee, Su ^a   Myoung, Jae Min ^a   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

^b LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUSINGAZNO (A-IGZO); AR PLASMA TREATMENT; CHANNEL RESISTANCE; CONCENTRATION-DEPENDENT; DECOMPOSITION ANALYSIS; DEPTH-PROFILE ANALYSIS; FIELD-EFFECT MOBILITIES; MOBILITY ENHANCEMENT;

CARRIER CONCENTRATION; PHOTOELECTRONS; PHOTORESISTS; PLASMA THEORY; THIN FILM TRANSISTORS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84879076312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4809727     Document Type: Article

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