Interface designed MoS 2 /GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

Scientific Reports

Volumn 5, Issue , 2015, Pages

  Lin, Shisheng ^a,b   Li, Xiaoqiang ^a   Wang, Peng ^a   Xu, Zhijuan ^a   Zhang, Shengjiao ^a   Zhong, Huikai ^a   Wu, Zhiqian ^a   Xu, Wenli ^a   Chen, Hongsheng ^a,b  

^a ZHEJIANG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84944213426     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep15103     Document Type: Article

References (41)

1. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183-191 (2007).
2. Geim, A. K. Graphene: Status and prospects. Science 324, 1530-1534 (2009).
3. Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419-425 (2013).
4. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200 (2005).
5. Nair, R. R. et al. Fine structure constant defines visual transparency of graphene. Science 320, 1308-1308 (2008).
6. Tsai, M. L. et al. Monolayer MoS2 heterojunction solar cells. ACS Nano 8, 8317-8322 (2014).
7. Gan, X. T. et al. Chip-integrated ultrafast graphene photodetector with high responsivity. Nat. Photonics 7, 883-887 (2013).
8. Konstantatos, G. et al. Hybrid graphene-quantum dot phototransistors with ultrahigh gain. Nat. Nanotechnol. 7, 363-368 (2012).
9. Zhang, W. J. et al. Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures. Sci. Rep. 4, 03826 (2014).
10. Zeng, L. H. et al. Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector. ACS Appl. Mater. Inter. 5, 9362-9366 (2013).
11. Wang, X. J. et al. Photo-induced doping in graphene/silicon heterostructures. J. Phys. Chem. C 119, 1061-1066 (2015).
12. Miao, X. C. et al. High efficiency graphene solar cells by chemical doping. Nano Lett. 12, 2745-2750 (2012).
13. Shi, E. Z. et al. Colloidal antireflection coating improves graphene-silicon solar cells. Nano Lett. 13, 1776-1781 (2013).
14. Zhang, X. Z. et al. High-efficiency graphene/Si nanoarray Schottky junction solar cells via surface modification and graphene doping. J. Mater. Chem. A 1, 6593-6601 (2013).
15. Brus, V. V. et al. Stability of graphene-silicon heterostructure solar cells. Phys. Status Solidi A 211, 843-847 (2014).
16. Li, X. M. et al. Graphene-on-silicon Schottky junction solar cells. Adv. Mater 22, 2743-2748 (2010).
17. Song, Y. et al. Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells. Nano Lett. 15, 2104-2110 (2015).
18. Li, X. Q. et al. 18.5% efficient graphene/GaAs van der Waals heterostructure solar cell. Nano Energy, doi: 10.1016/j. nanoen.2015.07.003 (2015).
19. Lei, T. M. et al. Electronic structure and optical properties of monolayer MoS2. Rare Metal Mat. Eng. 42, 2477-2480 (2013).
20. Bernardi, M., Palummo, M. & Grossman, J. C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664-3670 (2013).
21. Li, B. et al. Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei. RSC Adv. 4, 26407-26412 (2014).
22. McCreary, K. M. et al. Large-area synthesis of continuous and uniform MoS2 monolayer films on graphene. Adv. Funct. Mater. 24, 6449-6454 (2014).
23. Lan, F. F. et al. Epitaxial growth of single-crystalline monolayer MoS2 by two-step method. ECS Solid State Lett. 4, 19-21 (2015).
24. Vorobev, V. N. & Sokolov, Y. F. Determination of mobility in small samples of gallium arsenide from magnetoresistive effects. Sov. Phys. Semicond. 5, 616-620 (1971).
25. Bauhuis, G. J., Mulder, P., Haverkamp, E. J., Huijben, J. C. C. M. & Schermer, J. J. 26.1% thin-film GaAs solar cell using epitaxial lift-off. Sol. Energ. Mat. Sol. C 93, 1488-1491 (2009).
26. Belghachi, A., Helmaoui, A. & Cheknane, A. High efficiency all-GaAs solar cell. Prog. Photovoltaics 18, 79-82 (2010).
27. Das, A. et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat. Nanotechnol. 3, 210-215 (2008).
28. Chen, C. C., Chang, C. C., Li, Z., Levi, A. F. J. & Cronin, S. B. Gate tunable graphene-silicon Ohmic/Schottky contacts. Appl. Phys. Lett. 101, 223113 (2012).
29. Xu, H. et al. High responsivity and gate tunable graphene-MoS2 hybrid phototransistor. Small 10, 2300-2306 (2014).
30. Kummell, T., Quitsch, W., Matthis, S., Litwin, T. & Bacher, G. Gate control of carrier distribution in k-space in MoS2 monolayer and bilayer crystals. Phys. Rev. B 91, 125305 (2015).
31. Zhong, H. J. et al. Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study. J. Appl. Phys. 115, 013701 (2014).
32. Li, H.-M. et al. Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors. Sci. Rep. 4, 04041 (2014).
33. Kim, K. K. et al. Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices. ACS Nano 6, 8583-8590 (2012).
34. Powers, M. J. et al. Observation of a negative electron affinity for boron nitride. Appl. Phys. Lett. 67, 3912-3914 (1995).
35. Li, H. et al. From bulk to monolayer MoS2: evolution of Raman scattering. Adv. Funct. Mater. 22, 1385-1390 (2012).
36. Gorbachev, R. V. et al. Hunting for monolayer boron nitride: Optical and Raman signatures. Small 7, 465-468 (2011).
37. Carpenter, M. S., Melloch, M. R. & Dungan, T. E. Schottky-barrier formation on (NH4)2S-treated n-type and p-type (100) GaAs. Appl. Phys. Lett. 53, 66-68 (1988).
38. Wang, W. Y. et al. Controllable Schottky barriers between MoS2 and permalloy. Sci. Rep. 4, 06928 (2014).
39. Chen, C. C., Chang, C. C., Li, Z., Levi, A. F. J. & Cronin, S. B. Gate tunable graphene-silicon Ohmic/Schottky contacts. Appl. Phys. Lett. 101, 223113 (2012).
40. Kim, K. K. et al. Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Nano Lett. 12, 161-166 (2012).
41. Y. H. Lee et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325 (2012).