Photo-induced doping in graphene/silicon heterostructures

Journal of Physical Chemistry C

Volumn 119, Issue 2, 2015, Pages 1061-1066

  Wang, Xiao Juan ^a,b   Zou, Liping ^a   Li, Dong ^a   Zhang, Qichong ^a   Wang, Fengli ^a   Zhang, Zengxing ^a  

^a Tongji University   (China)

^b HENAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; IRRADIATION; OPEN CIRCUIT VOLTAGE;

ELECTRONIC PROPERTIES OF GRAPHENE; IN-DEPTH UNDERSTANDING; LIGHT IRRADIATIONS; PHOTOELECTRICAL MEASUREMENTS; PHOTOINDUCED DOPING; PHOTOVOLTAIC PROPERTY; SCHOTTKY JUNCTIONS; SERIES RESISTANCES;

GRAPHENE;

EID: 84921281177     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp509878m     Document Type: Article

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