High efficiency all-GaAs solar cell

Progress in Photovoltaics: Research and Applications

Volumn 18, Issue 2, 2010, Pages 79-82

  Belghachi, Abderrahmane ^a   Abderrachi, Helmaoui ^a   Cheknane, Ali ^b  

^a UNIVERSITY OF BECHAR   (Algeria)

^b UNIVERSITY OF LAGHOUAT   (Algeria)

Author keywords

Auger recombination; Band gap narrowing; FSF; Gaas solar cell; High low junction

Indexed keywords

ANALYTICAL MODEL; AUGER RECOMBINATION; BAND GAP NARROWING; CELL PERFORMANCE; DOPED LAYERS; DOPING DENSITIES; FREE CARRIERS; FRONT SURFACES; GAAS SOLAR CELLS; GAAS SURFACES; HIGH EFFICIENCY; HIGH-LOW; INTERFACE SURFACES; PHOTON ABSORPTIONS; SURFACE RECOMBINATIONS; UPPER BOUNDARY; WIDE BAND GAP; WINDOW LAYER;

AUGERS; CONVERSION EFFICIENCY; DOPING (ADDITIVES); ENERGY CONVERSION; GALLIUM ALLOYS; GALLIUM ARSENIDE; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR ENERGY; SOLAR POWER GENERATION;

CELLS;

EID: 77649225954     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.928     Document Type: Article

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