SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 4, Issue 50, 2014, Pages 26407-26412

Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei

(8) Li, Bo a Yang, Shengxue a Huo, Nengjie a Li, Yongtao a Yang, Juehan a Li, Renxiong a Fan, Chao a Lu, Fangyuan a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; MOLYBDENUM OXIDE; MONOLAYERS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

3 ,4 ,9 ,10-PERYLENE-TETRACARBOXYLIC-DIANHYDRIDE; CARRIER GAS; CHEMICAL VAPOUR DEPOSITION; CORE-SHELL; FORMATION MECHANISM; FORMATION PROCESS; INTERMEDIATE STATE; NOVEL INTERMEDIATES;

NANOWIRES;

EID: 84903291656 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c4ra01632g Document Type: Article

Times cited : (50)

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