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Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

Gate tunable graphene-silicon Ohmic/Schottky contacts

(5) Chen, Chun Chung a Chang, Chia Chi b Li, Zhen a Levi, A F J a Cronin, Stephen B a

a University of Southern California (United States)

b UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NEUTRALITY; GATE VOLTAGES; IV CHARACTERISTICS; LOW BIAS; OHMIC BEHAVIOR; P-TYPE SILICON; PHOTOINDUCED CURRENTS; POLYMER ELECTROLYTE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY JUNCTIONS; SILICON SUBSTRATES; THREE ORDERS OF MAGNITUDE; TOP GATE; WORK-FUNCTION DIFFERENCE;

FERMI LEVEL; GRAPHENE; OHMIC CONTACTS;

SILICON;

EID: 84870528018 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4768921 Document Type: Article

Times cited : (43)

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