Controlled ambipolar doping and gate voltage dependent carrier diffusion length in lead sulfide nanowires

Nano Letters

Volumn 12, Issue 11, 2012, Pages 5890-5896

  Yang, Yiming ^a   Li, Jiao ^a,b   Wu, Hengkui ^a,d   Oh, Eunsoon ^c   Yu, Dong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NANJING UNIVERSITY   (China)

^c Chungnam National University   (South Korea)

^d Phonone Inc   (United States)

Author keywords

carrier diffusion length; doping; field effect transistors; lead sulfide; Nanowires; scanning photocurrent microscopy

Indexed keywords

AMBIPOLAR; CARRIER DIFFUSION LENGTH; CONCENTRATION-DEPENDENT; DOPING METHODS; FIELD EFFECTS; GATE VOLTAGES; HIGH QUALITY; LEAD SULFIDE; MINORITY CARRIER DIFFUSION LENGTH; P-TYPE; PHOTOVOLTAICS; RECOMBINATION LIFETIME; ROOM TEMPERATURE;

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; LEAD;

NANOWIRES;

EID: 84869195387     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303294k     Document Type: Article

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