SCOPUS 정보 검색 플랫폼

Volumn 21, Issue 18, 2011, Pages 6736-6741

Surface induced negative photoconductivity in p-type ZnSe:Bi nanowires and their nano-optoelectronic applications

(9) Zhang, Xiwei a Jie, Jiansheng a Wang, Zhi a Wu, Chunyan a Wang, Li a Peng, Qiang a Yu, Yongqiang a Jiang, Peng a Xie, Chao a

a HEFEI UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ACCEPTOR ACTIVATION; BI NANOWIRES; GROWTH DIRECTIONS; NANO-METAL; OPTOELECTRONIC APPLICATIONS; OXYGEN ABSORPTION; P-TYPE; P-TYPE CONDUCTIVITY; PHOTO-DESORPTION; PHOTORESPONSES; SCHOTTKY DIODES; SCHOTTKY GATE; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SURFACE EFFECT; ZINCBLENDE STRUCTURES; ZNSE NANOWIRES;

CRYSTAL STRUCTURE; DESORPTION; FIELD EFFECT TRANSISTORS; HOLE CONCENTRATION; NANOWIRES; OXYGEN; PHOTOCONDUCTIVITY; SCHOTTKY BARRIER DIODES; THERMAL EVAPORATION;

BISMUTH;

EID: 79955067194 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm00035g Document Type: Article

Times cited : (94)

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