Electric field dependent photocurrent decay length in single lead sulfide nanowire field effect transistors

Nano Letters

Volumn 11, Issue 2, 2011, Pages 717-722

  Graham, Rion ^a   Miller, Chris ^a   Oh, Eunsoon ^b   Yu, Dong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Chungnam National University   (South Korea)

Author keywords

field effect transistors; minority carrier diffusion length; nanowires; PbS; scanning photocurrent microscopy; solar cells

Indexed keywords

CHARGE SEPARATIONS; LEAD SULFIDE; MINORITY CARRIER DIFFUSION LENGTH; P-TYPE; PBS; PHOTOCURRENT DECAY; PHOTORESPONSES; VAPOR-LIQUID-SOLID METHODS;

DIFFUSION; ELECTRIC FIELD EFFECTS; ELECTRIC WIRE; NANOWIRES; PHOTOCURRENTS; SCANNING; SOLAR CELLS;

FIELD EFFECT TRANSISTORS;

LEAD; LEAD SULFIDE; NANOMATERIAL; SULFIDE; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SEMICONDUCTOR;

ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LEAD; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SULFIDES; TITANIUM; TRANSISTORS, ELECTRONIC;

EID: 79851497471     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1038456     Document Type: Article

References (32)

1. Wehrenberg, B. L.; Wang, C. J.; Guyot-Sionnest, P. J. Phys. Chem. B 2002, 106, 10634-10640
2. Konstantatos, G.; Howard, I.; Fischer, A.; Hoogland, S.; Clifford, J.; Klem, E.; Levina, L.; Sargent, E. H. Nature 2006, 442, 180-183
3. Luther, J. M.; Law, M.; Beard, M. C.; Song, Q.; Reese, M. O.; Ellingson, R. J.; Nozik, A. J. Nano Lett. 2008, 8, 3488-3492
4. Sargent, E. H. Nat. Photonics 2009, 3, 325-331
5. Schaller, R. D.; Klimov, V. I. Phys. Rev. Lett. 2004, 92 186601
6. Ellingson, R. J.; Beard, M. C.; Johnson, J. C.; Yu, P. R.; Micic, O. I.; Nozik, A. J.; Shabaev, A.; Efros, A. L. Nano Lett. 2005, 5, 865-871
7. Kayes, B. M.; Atwater, H. A.; Lewis, N. S. J. Appl. Phys. 2005, 97, 11
8. Kelzenberg, M. D.; Turner-Evans, D. B.; Kayes, B. M.; Filler, M. A.; Putnam, M. C.; Lewis, N. S.; Atwater, H. A. Nano Lett. 2008, 8, 710-714
9. Balasubramanian, K.; Burghard, M.; Kern, K.; Scolari, M.; Mews, A. Nano Lett. 2005, 5, 507-510
10. Ahn, Y.; Dunning, J.; Park, J. Nano Lett. 2005, 5, 1367-1370
11. Gu, Y.; Romankiewicz, J. P.; David, J. K.; Lensch, J. L.; Lauhon, L. J. Nano Lett. 2006, 6, 948-952
12. Freitag, M.; Tsang, J. C.; Bol, A.; Yuan, D. N.; Liu, J.; Avouris, P. Nano Lett. 2007, 7, 2037-2042
13. Ahn, Y. H.; Tsen, A. W.; Kim, B.; Park, Y. W.; Park, J. Nano Lett. 2007, 7, 3320-3323
14. Allen, J. E.; Hemesath, E. R.; Lauhon, L. J. Nano Lett. 2009, 9, 1903-1908
15. Soudi, A.; Dhakal, P.; Gu, Y. Appl. Phys. Lett. 2010, 96 253115
16. Kim, C. J.; Lee, H. S.; Cho, Y. J.; Kang, K.; Jo, M. H. Nano Lett. 2010, 10, 2043-2048
17. Doh, Y. J.; Maher, K. N.; Ouyang, L.; Yu, C. L.; Park, H.; Park, J. Nano Lett. 2008, 8, 4552-4556
18. Reich, S.; Dworzak, M.; Hoffmann, A.; Thomsen, C.; Strano, M. S. Phys. Rev. B 2005, 71 033402
19. Scanlon, W. W. Phys. Rev. 1958, 109, 47-50
20. Bierman, M. J.; Lau, Y. K. A.; Jin, S. Nano Lett. 2007, 7, 2907-2912
21. Yang, P.; Fardy, M.; Hochbaum, A. I.; Goldberger, J.; Zhang, M. M. Adv. Mater. 2007, 19, 3047-3051
22. Lau, Y. K. A.; Chernak, D. J.; Bierman, M. J.; Jin, S. J. Mater. Chem. 2009, 19, 934-940
23. Wang, J. F.; Gudiksen, M. S.; Duan, X. F.; Cui, Y.; Lieber, C. M. Science 2001, 293, 1455-1457
24. Jie, J. S.; Zhang, W. J.; Jiang, Y.; Meng, X. M.; Li, Y. Q.; Lee, S. T. Nano Lett. 2006, 6, 1887-1892
25. Kung, S. C.; van der Veer, W. E.; Yang, F.; Donavan, K. C.; Penner, R. M. Nano Lett. 2010, 10, 1481-1485
26. Kind, H.; Yan, H. Q.; Messer, B.; Law, M.; Yang, P. D. Adv. Mater. 2002, 14, 158-160
27. laser = 1 μm, and hν was the incident photon energy.
28. McDonald, S. A.; Konstantatos, G.; Zhang, S. G.; Cyr, P. W.; Klem, E. J. D.; Levina, L.; Sargent, E. H. Nat. Mater. 2005, 4, 138-U14
29. bi is the barrier height 90 meV.
30. Sze, S. M. Physics of semiconductor devices, 2nd ed.; Wiley: New York, 1981.
31. Ryvkin, S. M. Photoelectric effects in semiconductors; Consultants Bureau: New York, 1964.
32. -x/l).