Tuning the Schottky Barrier at the Graphene/MoS2 Interface by Electron Doping: Density Functional Theory and Many-Body Calculations

Journal of Physical Chemistry C

Volumn 119, Issue 34, 2015, Pages 19928-19933

  Jin, Chengjun ^a   Rasmussen, Filip A ^a   Thygesen, Kristian S ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; CALCULATIONS; ENERGY GAP; GRAPHENE; INTERFACES (MATERIALS); MOLYBDENUM COMPOUNDS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES;

AB INITIO CALCULATIONS; DOPING CONCENTRATION; ELECTROSTATIC POTENTIALS; ENERGY LEVEL ALIGNMENT; GENERALIZED GRADIENT APPROXIMATIONS; MANY-BODY CALCULATIONS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS;

DENSITY FUNCTIONAL THEORY;

EID: 84940519402     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b05580     Document Type: Article

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