Detection of dead layers and defects in polycrystalline Cu2O thin-film transistors by x-ray reflectivity and photoresponse spectroscopy analyses

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volumn 33, Issue 5, 2015, Pages

  Ran, Fan Yong ^a   Hiramatsu, Hidenori ^a   Hosono, Hideo ^a   Kamiya, Toshio ^a   Taniguti, Masataka ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ELECTROMAGNETIC WAVE ABSORPTION; FIELD EFFECT TRANSISTORS; GLASS; HALL MOBILITY; HOLE MOBILITY; INTERFACES (MATERIALS); LIGHT ABSORPTION; PULSED LASER DEPOSITION; REFLECTION; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS;

ANNEALING TEMPERATURES; CRYSTAL QUALITIES; FIELD-EFFECT MOBILITIES; POSTDEPOSITION THERMAL ANNEALING; ROOM TEMPERATURE; THIN-FILM TRANSISTOR (TFTS); X RAY REFLECTIVITY; X-RAY REFLECTIVITY ANALYSIS;

COPPER;

EID: 84940492136     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4929445     Document Type: Article

References (19)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004). 10.1038/nature03090
2. T. Kamiya, K. Nomura, and Hideo Hosono, Sci. Technol. Adv. Mater. 11, 044305 (2010). 10.1088/1468-6996/11/4/044305
3. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, Phys. Status Solidi A 206, 2187 (2009). 10.1002/pssa.200881792
4. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 032113 (2008). 10.1063/1.2964197
5. H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, and H. Hosono, Nature (London) 389, 939 (1997). 10.1038/40087
6. E. Fortin and F. L. Weichman, Can. J. Phys. 44, 1551 (1966). 10.1139/p66-128
7. G. Raebiger, S. Lany, and A. Zunger, Phys. Rev. B 76, 045209 (2007). 10.1103/PhysRevB.76.045209
8. K. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 202107 (2008). 10.1063/1.3026539
9. E. Fortunato, V. Figueiredo, P. Barquinha, E. Elamurugu, R. Barros, G. Goncalves, S.-H. K. Park, C.-S. Hwang, and R. Martins, Appl. Phys. Lett. 96, 192102 (2010). 10.1063/1.3428434
10. V. Figueiredo, E. Elangovan, R. Barros, J. V. Pinto, T. Busani, R. Martins, and Elvira Fortunato, J. Disp. Technol. 8, 41 (2012). 10.1109/JDT.2011.2170153
11. X. Zou, G. Fang, L. Yuan, M. Li, W. Guan, and X. Zhao, IEEE Electron Device Lett. 31, 827 (2010). 10.1109/LED.2010.2050576
12. X. Zou, G. Fang, J. Wan, X. He, H. Wang, N. Liu, H. Long, and X. Zhao, IEEE Trans. Electron Devices 58, 2003 (2011). 10.1109/TED.2011.2142313
13. Z. Q. Yao, S. L. Liu, L. Zhang, B. He, A. Kumar, X. Jiang, W. J. Zhang, and G. Shao, Appl. Phys. Lett. 101, 042114 (2012). 10.1063/1.4739524
14. F.-Y. Ran, M. Taniguti, H. Hosono, and T. Kamiya, J. Disp. Technol. 11, 720 (2015). 10.1109/JDT.2015.2432752
15. M. Zoughi, B. Prevot, and C. Carabatos, Phys. Status Solidi A 11, 449 (1972). 10.1002/pssa.2210110207
16. L. Shao, K. Nomura, T. Kamiya, and H. Hosono, Electrochem. Solid-State Lett. 14, H197 (2011). 10.1149/1.3555070
17. K. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Phys. Status Solidi A 206, 2192 (2009). 10.1002/pssa.200881795
18. B. Cao, Y.-H. Jia, G.-P. Li, and X.-M. Chen, Chin. Phys. B 19, 026601 (2010) 10.1088/1674-1056/19/2/026601.
19. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem. Soc. 133, 1242 (1986). 10.1149/1.2108827