Analyses of Surface and Interfacial Layers in Polycrystalline Cu2O Thin-Film Transistors

Journal of Display Technology

Volumn 11, Issue 9, 2015, Pages 720-724

  Ran, Fan Yong ^a   Taniguti, Masataka ^a   Hosono, Hideo ^a   Kamiya, Toshio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Copper compounds; semiconductor films; surface interface layers; thin film transistors (TFTs)

Indexed keywords

COPPER COMPOUNDS; COPPER OXIDES; DRAIN CURRENT; HALL MOBILITY; HEAVY IONS; INTERFACE STATES; PHOTOELECTRON SPECTROSCOPY; SILICA; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS;

FIELD-EFFECT MOBILITIES; INTERFACE LAYER; INTERFACIAL LAYER; INTERFACIAL TRAP STATE; LOW TEMPERATURES; SEMICONDUCTOR FILMS; SURFACE/INTERFACE; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 84939616593     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2015.2432752     Document Type: Article

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