P-Type Cu x films deposited at room temperature for thin-film transistors

IEEE/OSA Journal of Display Technology

Volumn 8, Issue 1, 2012, Pages 41-47

  Figueiredo, V ^a   Elangovan, E ^a   Barros, R ^a,b   Pinto, J V ^a   Busani, T ^a   Martins, R ^a   Fortunato, Elvira ^a  

^a DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS   (Portugal)

^b INNOVNANO   (Portugal)

Author keywords

Copper oxide; P type oxides; Sputtering; Thin film transistors (TFTs)

Indexed keywords

CU FILMS; CUBIC STRUCTURE; GRAIN SIZE; METALLIC COPPER; OXYGEN PARTIAL PRESSURE; P-TYPE; P-TYPE BEHAVIORS; ROOM TEMPERATURE; SURFACE MICROSTRUCTURES; X-RAY DIFFRACTION DATA;

COPPER OXIDES; CRYSTALLITE SIZE; METALLIC COMPOUNDS; SPUTTERING; THIN FILM TRANSISTORS; X RAY DIFFRACTION;

COPPER;

EID: 84855429944     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2011.2170153     Document Type: Article

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