Atomic diffusion in annealed CU/SiO2/Si (100) system prepared by magnetron sputtering

Chinese Physics B

Volumn 19, Issue 2, 2010, Pages

  Cao, Bo ^a,b   Jia, Yan Hui ^a   Li, Gong Ping ^a   Chen, Xi Meng ^a  

^a LANZHOU UNIVERSITY   (China)

^b NORTH CHINA ELECTRIC POWER UNIVERSITY   (China)

Author keywords

Copper silicides; Diffusion; Interface reaction

Indexed keywords

ANNEALING TEMPERATURES; ATOMIC DIFFUSIONS; COPPER SILICIDE; CU THIN FILM; DIFFUSION ACTIVATION ENERGY; DIFFUSION INTERFACE; INTER-DIFFUSION; INTERFACE REACTIONS; ONSET TEMPERATURE; P-TYPE SI; ROOM TEMPERATURE; RUTHERFORD BACKSCATTERING SPECTROMETRY; SI(1 0 0);

ACTIVATION ENERGY; ANNEALING; DIFFUSION IN SOLIDS; MAGNETRONS; PHASE INTERFACES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; X RAY DIFFRACTION;

COPPER;

EID: 77649262638     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/2/026601     Document Type: Article

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