Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type Cu2O Thin-Film Transistors Using a HfO2 High-k Gate Dielectric Grown on a SiO2/Si Substrate by Pulsed Laser Ablation

IEEE Transactions on Electron Devices

Volumn 58, Issue 7, 2011, Pages 2003-2007

  Zou, Xiao ^a,b   Fang, Guojia ^a   Wan, Jiawei ^a   He, Xun ^c   Wang, Haoning ^a   Liu, Nishuang ^a   Long, Hao ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b JIANGHAN UNIVERSITY   (China)

^c MILLSAPS COLLEGE   (United States)

Author keywords

Cu2O; HfO2; stressing stability; subthreshold swing; thin film transistors (TFTs)

Indexed keywords

GATE-LEAKAGE CURRENT; HFO2; HIGH-K GATE DIELECTRICS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; STACKED GATE DIELECTRICS; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); THRESHOLD-VOLTAGE SHIFT;

DIELECTRIC DEVICES; GATE DIELECTRICS; HAFNIUM OXIDES; PULSED LASER DEPOSITION;

THIN FILM TRANSISTORS;

EID: 84861806879     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2142313     Document Type: Article

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