Endurance improvement of Ge2Sb2Te5-based phase change memory

2009 IEEE International Memory Workshop, IMW '09

Volumn , Issue , 2009, Pages

  Chen, Chieh Fang ^a   Schrott, A ^a   Lee, M H ^a   Raoux, S ^a   Shih, Y H ^a   Breitwisch, M ^a   Baumann, F H ^a   Lai, E K ^a   Shaw, T M ^a   Flaitz, P ^a   Cheek, R ^a   Joseph, E A ^a   Chen, S H ^a   Rajendran, B ^a   Lung, H L ^a   Lam, C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Dopant; Ge2Sb2Te5; Phase change memory; Void

Indexed keywords

DENSITY DIFFERENCE; DOPANT; DOPING MATERIALS; ENDURANCE IMPROVEMENT; GE2SB2TE5; THERMAL OPERATIONS; VOID; VOID FORMATION;

CELL MEMBRANES; DOPING (ADDITIVES); DURABILITY; FAILURE ANALYSIS; GERMANIUM; SYSTEM THEORY; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 70349987900     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090589     Document Type: Conference Paper

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