Stress evaluation of Through-Silicon Vias using micro-infrared photoelasticity and finite element analysis

Optics and Lasers in Engineering

Volumn 74, Issue , 2015, Pages 87-93

  Su, Fei ^a   Lan, Tianbao ^a   Pan, Xiaoxu ^a  

^a BEIHANG UNIVERSITY   (China)

Author keywords

Finite element analysis; Hybrid method; Infrared photoelasticity; Stress; Through silicon vias (TSV)

Indexed keywords

COMPUTER GENERATED HOLOGRAPHY; ELASTICITY; ELECTRONICS PACKAGING; INTEGRATED CIRCUIT INTERCONNECTS; INTERFEROMETRY; PHOTOELASTICITY; PHYSICAL OPTICS; STRESSES; THREE DIMENSIONAL INTEGRATED CIRCUITS;

ELECTRONIC PACKAGING; ELEVATED TEMPERATURE; FABRICATION TECHNOLOGIES; HYBRID METHOD; INFRARED PHOTOELASTICITY; STRESS EVALUATIONS; STRESS-FREE TEMPERATURE; THROUGH SILICON VIAS;

FINITE ELEMENT METHOD;

EID: 84931287900     PISSN: 01438166     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optlaseng.2015.05.010     Document Type: Article

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