Nondestructive measurement of the residual stresses in copper through-silicon vias using synchrotron-based microbeam X-ray diffraction

IEEE Transactions on Electron Devices

Volumn 61, Issue 7, 2014, Pages 2473-2479

  Okoro, Chukwudi ^a   Levine, Lyle E ^a   Xu, Ruqing ^b   Hummler, Klaus ^c   Obeng, Yaw S ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c SEMATECH   (United States)

Author keywords

Interconnect; keep out zone (KOZ); stress measurement; synchrotron; three dimensional integrated circuits (3DIC); through silicon via (TSV); X ray diffraction.

Indexed keywords

STRESS MEASUREMENT; SYNCHROTRONS; THREE DIMENSIONAL INTEGRATED CIRCUITS; X RAY DIFFRACTION;

INTERCONNECT; KEEP-OUT-ZONE; MICROBEAM X-RAY DIFFRACTION; MICROSTRUCTURAL VARIATION; NON-DESTRUCTIVE MEASUREMENT; THREEDIMENSIONAL INTEGRATED CIRCUITS (3DIC); THROUGH-SILICON VIA; X RAY MICRODIFFRACTION;

ELECTRONICS PACKAGING;

EID: 84903149947     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2321736     Document Type: Article

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