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Volumn 41, Issue 2, 2012, Pages 322-335
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Interfacial effects during thermal cycling of Cu-filled through-silicon vias (TSV)
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Author keywords
3 D packaging; electromigration; interfacial sliding; thermal cycling; Through silicon via
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Indexed keywords
3D PACKAGING;
ANALYTICAL MODEL;
COEFFICIENTS OF THERMAL EXPANSIONS;
CYCLING CONDITIONS;
DIMENSIONAL CHANGES;
ELECTRON FLOW;
EXPERIMENTAL EVIDENCE;
EXPERIMENTAL OBSERVATION;
INTERCONNECT STRUCTURES;
INTERFACIAL EFFECTS;
INTERFACIAL SLIDING;
THERMAL EXCURSION;
THROUGH SILICON VIAS;
THROUGH-SILICON VIA;
TWO-MATERIALS;
DISSIMILAR MATERIALS;
ELECTRIC CURRENTS;
ELECTROMIGRATION;
ELECTRONICS PACKAGING;
INTERFACES (MATERIALS);
LEAD;
MATHEMATICAL MODELS;
PACKAGING MATERIALS;
SHEAR FLOW;
SHEAR STRESS;
SILICON;
THERMAL CYCLING;
THREE DIMENSIONAL;
THERMAL EXPANSION;
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EID: 84855432101
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-011-1726-6 Document Type: Article |
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Times cited : (93)
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References (16)
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